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Dielectric Constants and Their Role in Plasma Simulation
Valdemar Johansen, Malthe Rasmussen and Arne Knudsen Fusion of Multidisciplinary Research, An International Journal 3(1) 248 (2022) https://doi.org/10.63995/IYWJ6936
Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics
Strong temperature dependence of transfer characteristics and time constants near freezing point of ionic liquid in an ambipolar electric double layer transistor
Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT
Ramkumar Natarajan, Eswaran Parthasarathy and P. Murugapandiyan Silicon 14(16) 10437 (2022) https://doi.org/10.1007/s12633-022-01746-z
Jing-Kai Huang, Yi Wan, Junjie Shi, Ji Zhang, Zeheng Wang, Zi-Liang Yang, Bo-Chao Huang, Ya-Ping Chiu, Wenxuan Wang, Ni Yang, Yang Liu, Chun-Ho Lin, Xinwei Guan, Long Hu, Jack Yang, Danyang Wang, Vincent Tung, Kourosh Kalantar-Zadeh, Tom Wu, Xiaotao Zu, Liang Qiao, Sean Li and Lain-Jong Li 7.6.1 (2022) https://doi.org/10.1109/IEDM45625.2022.10019466
Controlling the fixed negative charge formation in Si/high-
k
interfaces
An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices
Premdass Devaray, Sharifah Fatmadiana Wan Muhammad Hatta and Yew Hoong Wong Journal of Materials Science: Materials in Electronics 33(10) 7313 (2022) https://doi.org/10.1007/s10854-022-07975-7
Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors
Subthreshold Swing of 59 mV decade−1 in Nanoscale Flexible Ultralow‐Voltage Organic Transistors
Michael Geiger, Robin Lingstädt, Tobias Wollandt, Julia Deuschle, Ute Zschieschang, Florian Letzkus, Joachim N. Burghartz, Peter A. van Aken, R. Thomas Weitz and Hagen Klauk Advanced Electronic Materials 8(5) (2022) https://doi.org/10.1002/aelm.202101215
Effect of sintering condition on crystal structure and dielectric properties of novel LuGa1/3Ti2/3O3+x/2 and RGa1/3Ti2/3O3+x/2 (R= Lu0.2Yb0.2Tm0.2Er0.2Ho0.2) high-entropy ceramic compounds: A comparative study
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Haiyan Chen, Xuefan Zhou, Lin Tang, Yonghong Chen, Hang Luo, Xi Yuan, Chris R. Bowen and Dou Zhang Applied Physics Reviews 9(1) (2022) https://doi.org/10.1063/5.0066607
An in-depth understanding of the solvation effect of methanol on the anisotropy of electrochemical corrosion of Ta
Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation
Liam Gillan, Shujie Li, Jouko Lahtinen, Chih‐Hung Chang, Ari Alastalo and Jaakko Leppäniemi Advanced Materials Interfaces 8(12) (2021) https://doi.org/10.1002/admi.202100728
Plasma-metal oxides coupling for CH4-CO2 transformation into syngas and/or hydrocarbons, oxygenates
Deposition of a SiO2 Shell of Variable Thickness and Chemical Composition to Carbonyl Iron: Synthesis and Microwave Measurements
Arthur V. Dolmatov, Sergey S. Maklakov, Polina A. Zezyulina, Alexey V. Osipov, Dmitry A. Petrov, Andrey S. Naboko, Viktor I. Polozov, Sergey A. Maklakov, Sergey N. Starostenko and Andrey N. Lagarkov Sensors 21(14) 4624 (2021) https://doi.org/10.3390/s21144624
Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy
Multilayer ultraviolet reflective coating based on atomic layer deposited aluminum oxide and fluoride
Zhiyu Huang, Daniel C. Messina, Brianna S. Eller, Franz A. Koeck, Paul A. Scowen and Robert J. Nemanich Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39(4) (2021) https://doi.org/10.1116/6.0001010
Surface-Plasmon Properties of Noble Metals with Exotic Phases
Controllable Excitation of Surface Plasmon Polaritons in Graphene‐Based Semiconductor Quantum Dot Waveguides
Mikhail Yu. Gubin, Alexei V. Prokhorov, Valentyn S. Volkov and Andrey B. Evlyukhin Annalen der Physik 533(11) (2021) https://doi.org/10.1002/andp.202100139
Star polymer–TiO2 nanohybrids to effectively modify the surface of PMMA dielectric layers for solution processable OFETs
Katarzyna Budzalek, Hangjun Ding, Lukasz Janasz, et al. Journal of Materials Chemistry C 9(4) 1269 (2021) https://doi.org/10.1039/D0TC03137B
Performance Analysis for Tri-Gate Junction-Less FET by Employing Trioxide and Rectangular Core Shell (RCS) Architecture
Effects of Dielectric Passivation on Device Performance of AlGaN/GaN High-Electron-Mobility Transistors
Jaeho Kim, Jaejoon Oh, Jongseob Kim and Jaehee Cho ECS Journal of Solid State Science and Technology 10(5) 055016 (2021) https://doi.org/10.1149/2162-8777/ac02a0
Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks
Wilhelmus J. H. (Willem-Jan) Berghuis, Jimmy Melskens, Bart Macco, Roel J. Theeuwes, Lachlan E. Black, Marcel A. Verheijen and Wilhelmus M. M. (Erwin) Kessels Journal of Applied Physics 130(13) (2021) https://doi.org/10.1063/5.0064808
Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films
Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode
Khaled Humood, Sueda Saylan, Maguy Abi Jaoude, Baker Mohammad and Florent Ravaux Materials Science and Engineering: B 271 115267 (2021) https://doi.org/10.1016/j.mseb.2021.115267
Encyclopedia of Materials: Technical Ceramics and Glasses
Ulrich Fotheringham, Martin Letz, Uwe Petzold, Simone Ritter and Yvonne Menke-Berg Encyclopedia of Materials: Technical Ceramics and Glasses 658 (2021) https://doi.org/10.1016/B978-0-12-818542-1.00085-0
Plasma-catalysis coupling for CH4 and CO2 conversion over mesoporous macroporous Al2O3: Influence of the physico-chemical properties
Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies
Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf
x
Zr1-x
O2/Interlayer/Si (MFIS) Gate Structure