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Crystallization of (Hf, Zr)O2 thin films via non-heating process and their application to ferroelectric-gate thin film transistors
Takeshi Asuka, Junpei Ouchi, Hironori Fujisawa and Seiji Nakashima Japanese Journal of Applied Physics 62(SM) SM1019 (2023) https://doi.org/10.35848/1347-4065/ace916
Evolution of High Dielectric Permittivity in Low-Temperature Solution Combustion-Processed Phase-Pure High Entropy Oxide (CoMnNiFeCr)O for Thin Film Transistors
Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors
Fundamental Identification of Defect‐Related Electron Trap in Hf1−xZrxO2 Alloy Gate Dielectric on Silicon: Oxygen Vacancy versus Hydrogen Interstitial
Zhu-You Liu, Cai-Xin Zhang, Ruyue Cao, Xuefen Cai and Hui-Xiong Deng physica status solidi (RRL) – Rapid Research Letters 17(1) (2023) https://doi.org/10.1002/pssr.202200316
The non-innocent role of cobalt in manipulating the magnetic and electric properties of mesoporous silica thin films
Mohamed Barakat Zakaria Hegazy, Alexei A. Belik, Takahiro Nagata, Ahmed Khalil and Toyohiro Chikyow Microporous and Mesoporous Materials 359 112661 (2023) https://doi.org/10.1016/j.micromeso.2023.112661
Statics and dynamics of an underwater electrostatic curved electrode actuator with rough surfaces
Melinda A Lake-Speers, Sindhu Preetham Burugupally and David J Hoelzle Journal of Micromechanics and Microengineering 33(12) 125003 (2023) https://doi.org/10.1088/1361-6439/acfa0b
Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam
Structural, optical, and electrical properties of TiO2 thin films deposited by ALD: Impact of the substrate, the deposited thickness and the deposition temperature
Aline Jolivet, Christophe Labbé, Cédric Frilay, Olivier Debieu, Philippe Marie, Bryan Horcholle, Franck Lemarié, Xavier Portier, Clara Grygiel, Sylvain Duprey, Wojciech Jadwisienczak, David Ingram, Mudit Upadhyay, Adrian David, Arnaud Fouchet, Ulrike Lüders and Julien Cardin Applied Surface Science 608 155214 (2023) https://doi.org/10.1016/j.apsusc.2022.155214
Emerging nonoxide dielectrics for next‐generation electronics
Ga Hye Kim, Seung Beom Shin and Myung‐Gil Kim Bulletin of the Korean Chemical Society 44(10) 806 (2023) https://doi.org/10.1002/bkcs.12764
Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim and Seongjae Cho Advanced Materials Interfaces 10(21) (2023) https://doi.org/10.1002/admi.202300290
Effect of charge transfer on band alignment in 2D|3D heterostructures: A study of
HfS2|HfO2
interfaces
Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties
Florian Preischel, David Zanders, Thomas Berning, Aleksander Kostka, Detlef Rogalla, Claudia Bock and Anjana Devi Advanced Materials Interfaces 10(28) (2023) https://doi.org/10.1002/admi.202300244
Near-infrared wavelength tuning of monolayer graphene on Silicon Nitride waveguides
Artem S. Vorobev, Giuseppe Valerio Bianco, Giovanni Bruno, Antonella D’Orazio, Liam O’Faolain and Marco Grande Photonics and Nanostructures - Fundamentals and Applications 54 101130 (2023) https://doi.org/10.1016/j.photonics.2023.101130
Indirect Detection of Bacteria on Optically Enhanced Porous Silicon Membrane-Based Biosensors Using Selective Lytic Enzymes
P‐155: Late‐News Poster: Low Voltage Operation a‐IGZO Thin Film Transistor Using by Thermal Oxidation Metal Oxide Insulator
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Tailoring by AgNPs of the Energetics of Charge Carriers in Electrically Insulating Polymers at the Electrode/Dielectric Contact
Kremena Makasheva, Christina Villeneuve-Faure, Adriana Scarangella, Luca Montanari, Laurent Boudou and Gilbert Teyssedre IEEE Open Journal of Nanotechnology 4 133 (2023) https://doi.org/10.1109/OJNANO.2023.3284201
Reactive magnetron sputtered aluminum titanate high-к dielectric films for MIM devices
Investigation of the anatase-to-rutile transition for TiO2 sol-gel coatings with refractive index up to 2.7
Martin O'Byrne, Badre Kerzabi, Marco Abbarchi, Alejo Lifschitz, Tony Zamora, Victor Malgras, Anthony Gourdin, Mehrnaz Modaresialam, David Grosso and Magali Putero Thin Solid Films 140193 (2023) https://doi.org/10.1016/j.tsf.2023.140193
Heterostructure Films of SiO2 and HfO2 for High-Power Laser Optics Prepared by Plasma-Enhanced Atomic Layer Deposition
Dielectric metal/metal oxide nanocomposites: modeling response properties at multiple scales
Brett Henderson, Archita N S Adluri, Jeffrey T Paci and Irina Paci Modelling and Simulation in Materials Science and Engineering 31(6) 065015 (2023) https://doi.org/10.1088/1361-651X/ace540
Pattern Recognition Accuracy Optimization of Unsupervised Spiking Neural Network Using Y-Doped AlN Memristors
Yi Fu, Chu-Chun Huang, Zi-Yi Lin, Chi-Ching Lee and Jer-Chyi Wang IEEE Transactions on Electron Devices 70(8) 4473 (2023) https://doi.org/10.1109/TED.2023.3283944
Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD
Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application
Jongseo Park, Kyeong-Keun Choi, Jehyun An, Bohyeon Kang, Hyeonseo You, Giryun Hong, Sung-Min Ahn and Rock-Hyun Baek IEEE Access 11 60660 (2023) https://doi.org/10.1109/ACCESS.2023.3286976
Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling
Yuxuan Cosmi Lin, Cheng-Ming Lin, Hung-Yu Chen, Sam Vaziri, Xinyu Bao, Wei-Yen Woon, Han Wang and Szuya Sandy Liao IEEE Transactions on Electron Devices 70(4) 1454 (2023) https://doi.org/10.1109/TED.2022.3224100
Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices
P. Fernandes Paes Pinto Rocha, L. Vauche, M. Bedjaoui, S. Cadot, B. Mohamad, W. Vandendaele, E. Martinez, N. Gauthier, F. Pierre, H. Grampeix, G. Lefèvre, B. Salem and V. Sousa Solid-State Electronics 209 108780 (2023) https://doi.org/10.1016/j.sse.2023.108780
Low Leakage in High‐k Perovskite Gate Oxide SrHfO3
Growth and characterization of Ti-based films obtained from two selected precursors: H2O, TiCl4, Ti(N(CH3)2)4 or Al2(CH3)6 by the ALD method
Lukasz Wachnicki, Sylwia Gieraltowska, Bartlomiej S. Witkowski, Marek Godlewski and Elzbieta Guziewicz Materials Science in Semiconductor Processing 148 106792 (2022) https://doi.org/10.1016/j.mssp.2022.106792
Computational exploration and screening of novel Janus MA2Z4 (M = Sc-Zn, Y-Ag, Hf-Au; A=Si, Ge; Z=N, P) monolayers and potential application as a photocatalyst
Strong temperature dependence of transfer characteristics and time constants near freezing point of ionic liquid in an ambipolar electric double layer transistor
Mohammed Alaloul, Khalil As’ham, Haroldo T Hattori and Andrey E Miroshnichenko Journal of Optics 24(10) 105801 (2022) https://doi.org/10.1088/2040-8986/ac8a5c
Eun Seong Yu, Seo Jin Kang, Hyuck Su Lee, Jong Mo Lee and Byung Seong Bae (2022) https://doi.org/10.21203/rs.3.rs-1903056/v1
Sergey Zyuzin, Yason Zasseev, Askar Rezvanov, Vitaliy V. Panin, Vladimir Gvozdev, Yevgeniy Gornev, Konstantin V. Rudenko and Vladimir F. Lukichev 75 (2022) https://doi.org/10.1117/12.2624575
Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Haiyan Chen, Xuefan Zhou, Lin Tang, Yonghong Chen, Hang Luo, Xi Yuan, Chris R. Bowen and Dou Zhang Applied Physics Reviews 9(1) (2022) https://doi.org/10.1063/5.0066607
Guoxuan Qin, Yei Hwan Jung, Huilong Zhang, Ningyue Jiang, Pingxi Ma, Scott Stetson, Marco Racanelli and Zhenqiang Ma Advanced Electronic Materials 8(7) (2022) https://doi.org/10.1002/aelm.202101350
Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
Hannes Dahlberg, Anton E. O. Persson, Robin Athle and Lars-Erik Wernersson ACS Applied Electronic Materials 4(12) 6357 (2022) https://doi.org/10.1021/acsaelm.2c01483
Impact of annealing on electric and elastic properties of 10-nm Hf0.5Zr0.5O2 films prepared on Si by sputtering