The Citing articles tool gives a list of articles citing the current article. The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications
Richard Drevet, Pavel Souček, Pavel Mareš, Pavel Ondračka, Martin Dubau, Tamás Kolonits, Zsolt Czigány, Katalin Balázsi and Petr Vašina Vacuum 221 112881 (2024) https://doi.org/10.1016/j.vacuum.2023.112881
Performance comparison of flip-chip blue-light microLEDs with various passivation
Charge Transfer Mediated Photoluminescence Engineering in WS2 Monolayers for Optoelectronic Application
Bhumit Luhar, Rahul Dhankhar, Rajesh V. Nair, Ashish Soni, Nagendra S. Kamath, Suman Kalyan Pal and Viswanath Balakrishnan ACS Applied Nano Materials 7(19) 22350 (2024) https://doi.org/10.1021/acsanm.4c03296
Characteristics of grafted monocrystalline Si/
β
-Ga2O3p–n heterojunction
Jiarui Gong, Donghyeok Kim, Hokyung Jang, Fikadu Alema, Qingxiao Wang, Jie Zhou, Yiran Li, Tien Khee Ng, Shuoyang Qiu, Yang Liu, Moheb Sheikhi, Yi Lu, Ranveer Singh, Xin Su, Haris Naeem Abbasi, Qinchen Lin, Shuwen Xie, Kelson Chabak, Gregg Jessen, Clincy Cheung, Vincent Gambin, Shubhra S. Pasayat, Andrei Osinsky, Boon S. Ooi, Chirag Gupta and Zhenqiang Ma Applied Physics Letters 124(26) (2024) https://doi.org/10.1063/5.0208744
Enhanced dielectric and electrical properties of Ba(1−)Nd2∕3Zr0.1Ti0.9O3 (0.00 ≤ x ≤ 0.04) electroceramics for high temperature-based energy storage devices
Environmental protection and performance enhancement of hydrocarbon compressor based vapour compression refrigeration system using dry powder SiO2 nanoparticles: an experimental analysis
Electrochemical grand potential-based phase-field simulation of electric field-assisted sintering
Larry K. Aagesen, Stephanie A. Pitts, Brennan K. Harris, Tiankai Yao, Lucas D. Robinson and R. Edwin García Acta Materialia 275 120049 (2024) https://doi.org/10.1016/j.actamat.2024.120049
A Green High‐k Dielectric from Modified Carboxymethyl Cellulose‐Based with Dextrin
Leon Lukhas Santoso, Suhendro Purbo Prakoso, Hai‐Khue Bui, Qi‐An Hong, Ssu‐Yu Huang, Tai‐Chin Chiang, Kuan‐Yeh Huang, Siti Nurkhamidah, Dewi Tristantini and Yu‐Cheng Chiu Macromolecular Rapid Communications 45(12) (2024) https://doi.org/10.1002/marc.202400059
Influence of the content of stacked ZnO on the structural and optical properties of heterostructured ZnO/Ga2O3 films
Peverga R. Jubu, E. Danladi, M.B. Ochang, O. Adedokun, C.C. Amadi, D.D. Hile, W.V. Zhiya, A.A. Iorokpen, Y. Yusof and F.K. Yam Optical Materials: X 21 100291 (2024) https://doi.org/10.1016/j.omx.2024.100291
Investigation of Resistive Switching of Insulating Hafnium Nitride for Nonvolatile Memory Applications
Hoang Bao Chau Do, Chin-Han Chung, Thi Thu Mai, Om Kumar Prasad and Deepali Jagga ECS Journal of Solid State Science and Technology 13(2) 025005 (2024) https://doi.org/10.1149/2162-8777/ad2aed
Design strategies for dielectric metal–organic frameworks and their applications in microelectronic devices
Arif I. Inamdar, Saqib Kamal, Muhammad Usman, Ming-Hsi Chiang and Kuang-Lieh Lu Coordination Chemistry Reviews 502 215596 (2024) https://doi.org/10.1016/j.ccr.2023.215596
Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics
A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures
Saad Milad Ali Nsar, Zainuriah Hassan, Kuan Yew Cheong and Way Foong Lim Materials Research Express 11(6) 062003 (2024) https://doi.org/10.1088/2053-1591/ad52ef
The rise of memtransistors for neuromorphic hardware and In-memory computing
Multifunctional characterisation of pressureless sintered Al2O3 –CaTiO3 nanocomposite
July Randhari, Prafulla Kumar Mallik and Sukant Kumar Senapati International Journal of Materials Research 115(11-12) 970 (2024) https://doi.org/10.1515/ijmr-2024-0055
Doping-less MultiGate Inverted-T shape FET device with Schottky source/drain contacts
High-k Metal–Insulator–Metal Capacitors for RF and Mixed-Signal VLSI Circuits: Challenges and Opportunities
D. Kannadassan, K. Sivasankaran, S. Kumaravel, Chun-Hu Cheng, Maryam Shojaei Baghini and P. S. Mallick Proceedings of the IEEE 112(10) 1610 (2024) https://doi.org/10.1109/JPROC.2024.3506996
Preparation of High-Performance Transparent Al2O3 Dielectric Films via Self-Exothermic Reaction Based on Solution Method and Applications
Ferroelectric tunnel junctions: promise, achievements and challenges
Sung Hyuk Park, Hyeon Ji Lee, Min Hyuk Park, Jihyun Kim and Ho Won Jang Journal of Physics D: Applied Physics 57(25) 253002 (2024) https://doi.org/10.1088/1361-6463/ad33f5
Multifunctional HfAlO thin film: Ferroelectric tunnel junction and resistive random access memory
Yongjin Park, Jong-Ho Lee, Jung-Kyu Lee and Sungjun Kim The Journal of Chemical Physics 160(7) (2024) https://doi.org/10.1063/5.0190195
Low Voltage a-IGZO Thin Film Transistor Using Tantalum Oxide by Thermal Oxidation
Eun Seong Yu, Seung Gyun Kim, Seo Jin Kang, Hyuk Su Lee, Jong Mo Lee, Seung Jae Moon and Byung Seong Bae Electronic Materials Letters 20(2) 102 (2024) https://doi.org/10.1007/s13391-023-00431-6
Hollow Hafnium Oxide (HfO2) Fibers: Using an Effective Combination of Sol–Gel, Electrospinning, and Thermal Degradation Pathway
Characteristics assessment of TFT through 2D simulation under different material and structural configurations
Oli Lowna Baroi, S. M. Ishraqul Huq, Shourin R. Aura, Taniza Marium, Md. Shaikh Abrar Kabir and Satyendra N. Biswas Modern Physics Letters B 38(02) (2024) https://doi.org/10.1142/S0217984923502615
Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High-k Dielectric Sb2O3 and 2D Semiconductor MoS2
Qin Liu, Yang Zuo, Jingyu He, Minggang Zeng, Tong Yang, Jun Zhou, Yulin Yang, Ting Ting Song, Shijie Wang and Ming Yang The Journal of Physical Chemistry C 128(25) 10627 (2024) https://doi.org/10.1021/acs.jpcc.4c01323
Nanoscale dielectric properties of TiO2 in SiO2 nanocomposite deposited by hybrid PECVD method
C Villeneuve-Faure, M Mitronika, A P Dan, L Boudou, W Ravisy, M P Besland, M Richard-Plouet and A Goullet Nano Express 5(1) 015010 (2024) https://doi.org/10.1088/2632-959X/ad220d
Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics
Kui Meng, Zeya Li, Peng Chen, Xingyue Ma, Junwei Huang, Jiayi Li, Feng Qin, Caiyu Qiu, Yilin Zhang, Ding Zhang, Yu Deng, Yurong Yang, Genda Gu, Harold Y. Hwang, Qi-Kun Xue, Yi Cui and Hongtao Yuan Nature Nanotechnology 19(7) 932 (2024) https://doi.org/10.1038/s41565-024-01675-5
Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors
Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot and Bassem Salem Advanced Electronic Materials 10(3) (2024) https://doi.org/10.1002/aelm.202300528
Direct Imaging of Carrier Funneling in a Dielectric Engineered 2D Semiconductor
Corrosion and passivation of AlCrFe2Ni2Mox high-entropy alloys in sulphuric acid
Jakub Czerski, Marzena Mitoraj-Królikowska, Elżbieta Godlewska, Annica Wetzel, Julia Witt, Ozlem Ozcan, Mateusz Marzec and Marcin Goły Corrosion Science 229 111855 (2024) https://doi.org/10.1016/j.corsci.2024.111855
Stereochemically Active Lone Pairs: Unraveling the Electronic Origin of Dielectric Response in Nonlinear Optical TeO2
Highly sensitive and selective detection of dopamine using atomic layer deposited HfO2 ultra-thin films
Daniel Arulraj Abraham, Ai-Dong Li, Anandhavelu Sanmugam, Mohammad Ahmad Wadaan, Almohannad Baabbad, Kuppusamy Kanagaraj, K. Karuppasamy, T. Maiyalagan, Hyun-Seok Kim and Dhanasekaran Vikraman Electrochimica Acta 497 144574 (2024) https://doi.org/10.1016/j.electacta.2024.144574
Effects of the magnetic field and the off-center displacement on the third-order nonlinear optical susceptibility of inverted core/shell spherical one-electron quantum dots
Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance
Fernando José da Costa, Aseel Zeinati, Renan Trevisoli, Durga Misra and Rodrigo Trevisoli Doria IEEE Journal of the Electron Devices Society 12 1037 (2024) https://doi.org/10.1109/JEDS.2024.3485622
Synthesis and Study of Dielectric Properties of Composite Material Consisting of Glass Ceramics Based on Pearlite and TiO2
SrTiO3 and (Ba,Sr)TiO3 Films Epitaxially Grown on SrRuO3 Using Atomic Layer Deposition
Bo-Eun Park, Jaeho Lee, Jeongil Bang, Euncheol Do, Eunsun Kim, Cheolhyun An, Seong Yong Park, Sangjun Lee, Dong-Jin Yun, Jooho Lee, Yongsung Kim and Hyung-Jun Kim ACS Applied Materials & Interfaces 16(37) 49957 (2024) https://doi.org/10.1021/acsami.4c10400
Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics
Cheng-Yi Zhu, Meng-Ru Zhang, Qing Chen, Lin-Qing Yue, Rong Song, Cong Wang, Hui-Zhen Li, Feichi Zhou, Yang Li, Weiwei Zhao, Liang Zhen, Mengwei Si, Jia Li, Jingli Wang, Yang Chai, Cheng-Yan Xu and Jing-Kai Qin Nature Electronics 7(12) 1137 (2024) https://doi.org/10.1038/s41928-024-01245-6
A.A.A. Limburg, R.E. Montero Franco and S. Nijdam 1 (2024) https://doi.org/10.1109/CEIDP61745.2024.10907343
Influence of High-κ Dielectrics Integration on ALD-Based MoS2 Field-Effect Transistor Performance
Fundamental Identification of Defect‐Related Electron Trap in Hf1−xZrxO2 Alloy Gate Dielectric on Silicon: Oxygen Vacancy versus Hydrogen Interstitial
Zhu-You Liu, Cai-Xin Zhang, Ruyue Cao, Xuefen Cai and Hui-Xiong Deng physica status solidi (RRL) – Rapid Research Letters 17(1) (2023) https://doi.org/10.1002/pssr.202200316
Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity
Marvin Müller, Ipek Efe, Martin F. Sarott, Elzbieta Gradauskaite and Morgan Trassin ACS Applied Electronic Materials 5(3) 1314 (2023) https://doi.org/10.1021/acsaelm.2c01755
Wurtzite and fluorite ferroelectric materials for electronic memory
Voltage-gated field-free spin–orbit torque switching in Pt/Co/Ir/MgO wedged structures
Yang Li, Xiaotian Zhao, Wei Liu, Jinxiang Wu, Long Liu, Yuhang Song, Jun Ma and Zhidong Zhang Applied Physics Letters 123(3) (2023) https://doi.org/10.1063/5.0157986
Qin Liu, Yang Zuo, Jingyu He, Minggang Zeng, Tong Yang, Jun Zhou, Yulin Yang, Ting Ting Song, Shijie Wang and Ming Yang (2023) https://doi.org/10.2139/ssrn.4669295
Tailoring by AgNPs of the Energetics of Charge Carriers in Electrically Insulating Polymers at the Electrode/Dielectric Contact
Coulomb engineering of two-dimensional Mott materials
Erik G. C. P. van Loon, Malte Schüler, Daniel Springer, Giorgio Sangiovanni, Jan M. Tomczak and Tim O. Wehling npj 2D Materials and Applications 7(1) (2023) https://doi.org/10.1038/s41699-023-00408-x
Controllable Oxidation of ZrS2 to Prepare High‐κ, Single‐Crystal m‐ZrO2 for 2D Electronics
Yuanyuan Jin, Jian Sun, Ling Zhang, Junqiang Yang, Yangwu Wu, Bingying You, Xiao Liu, Kai Leng and Song Liu Advanced Materials 35(18) (2023) https://doi.org/10.1002/adma.202212079
Isotropic atomic layer etchings of various materials by using dry chemical removal
Hiroto Ohtake, Nobuya Miyoshi, Kazunori Shinoda, Sumiko Fujisaki and Yoshihide Yamaguchi Japanese Journal of Applied Physics 62(SG) SG0801 (2023) https://doi.org/10.35848/1347-4065/acaed0
Statics and dynamics of an underwater electrostatic curved electrode actuator with rough surfaces
Melinda A Lake-Speers, Sindhu Preetham Burugupally and David J Hoelzle Journal of Micromechanics and Microengineering 33(12) 125003 (2023) https://doi.org/10.1088/1361-6439/acfa0b
Heterostructure Films of SiO2 and HfO2 for High-Power Laser Optics Prepared by Plasma-Enhanced Atomic Layer Deposition
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae-Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim and Seongjae Cho Nanoscale 15(32) 13239 (2023) https://doi.org/10.1039/D3NR01930F
Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam
Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs
Huy-Binh Do, Quang-Ho Luc, Phuong V. Pham, Anh-Vu Phan-Gia, Thanh-Son Nguyen, Hoang-Minh Le and Maria Merlyne De Souza Micromachines 14(8) 1606 (2023) https://doi.org/10.3390/mi14081606
Evolution of High Dielectric Permittivity in Low-Temperature Solution Combustion-Processed Phase-Pure High Entropy Oxide (CoMnNiFeCr)O for Thin Film Transistors
Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices
P. Fernandes Paes Pinto Rocha, L. Vauche, M. Bedjaoui, S. Cadot, B. Mohamad, W. Vandendaele, E. Martinez, N. Gauthier, F. Pierre, H. Grampeix, G. Lefèvre, B. Salem and V. Sousa Solid-State Electronics 209 108780 (2023) https://doi.org/10.1016/j.sse.2023.108780
Significantly improved high k dielectric performance: Rare earth oxide as a passivation layer laminated with TiO2 film
Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon
A. Pradeepkumar, H. H. Cheng, K. Y. Liu, M. Gebert, S. Bhattacharyya, M. S. Fuhrer and F. Iacopi Journal of Applied Physics 133(17) (2023) https://doi.org/10.1063/5.0147376