Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H. J. Osten and A. Fissel
Applied Physics Letters 90 (25) (2007)
https://doi.org/10.1063/1.2746419

Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
https://doi.org/10.1016/j.physb.2007.09.019

Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]

Martin M. Frank, Yu Wang, Ming-Tsung Ho, et al.
Journal of The Electrochemical Society 154 (2) G44 (2007)
https://doi.org/10.1149/1.2405839

Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

Nathalie Capron, Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 91 (19) (2007)
https://doi.org/10.1063/1.2807282

Defect states in the high-dielectric-constant gate oxide HfSiO4

K. Xiong, Y. Du, K. Tse and J. Robertson
Journal of Applied Physics 101 (2) (2007)
https://doi.org/10.1063/1.2409662

Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers and L. Colombo
Journal of Applied Physics 101 (1) (2007)
https://doi.org/10.1063/1.2402974

Dielectric constants of amorphous hafnium aluminates: First-principles study

Hiroyoshi Momida, Tomoyuki Hamada, Yoshiteru Takagi, et al.
Physical Review B 75 (19) (2007)
https://doi.org/10.1103/PhysRevB.75.195105

Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

F. Zheng, H. G. Chew, W. K. Choi, J. X. Zhang and H. L. Seng
Journal of Applied Physics 101 (11) 114310 (2007)
https://doi.org/10.1063/1.2738385

Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

V. V. Afanas’ev and A. Stesmans
Journal of Applied Physics 102 (8) (2007)
https://doi.org/10.1063/1.2799091

Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

Kuan Yew Cheong, Jeong Hyun Moon, Dail Eom, et al.
Electrochemical and Solid-State Letters 10 (2) H69 (2007)
https://doi.org/10.1149/1.2400728

Advanced Gate Stacks for High-Mobility Semiconductors

A. Stesmans and V. V. Afanas’ev
Advanced Microelectronics, Advanced Gate Stacks for High-Mobility Semiconductors 27 211 (2007)
https://doi.org/10.1007/978-3-540-71491-0_9

Charge imbalance at oxide interfaces: How nature deals with it

J.-L. Maurice, I. Devos, M.-J. Casanove, et al.
Materials Science and Engineering: B 144 (1-3) 1 (2007)
https://doi.org/10.1016/j.mseb.2007.07.095

Hafnium zirconate gate dielectric for advanced gate stack applications

R. I. Hegde, D. H. Triyoso, S. B. Samavedam and B. E. White
Journal of Applied Physics 101 (7) (2007)
https://doi.org/10.1063/1.2716399

Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7

D. Liu, K. Tse and J. Robertson
Applied Physics Letters 90 (6) (2007)
https://doi.org/10.1063/1.2433031

Negative differential resistance in ultrathin Ge-on-insulator FETs

D Kazazis, A Zaslavsky, E Tutuc, N A Bojarczuk and S Guha
Semiconductor Science and Technology 22 (1) S1 (2007)
https://doi.org/10.1088/0268-1242/22/1/S01

Paramagnetic point defects in (100)Si∕LaAlO3 structures: Nature and stability of the interface

K. Clémer, A. Stesmans, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Journal of Applied Physics 102 (3) (2007)
https://doi.org/10.1063/1.2749423

Phase transformations in oxides induced by swift heavy ions

A. Benyagoub
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 245 (1) 225 (2006)
https://doi.org/10.1016/j.nimb.2005.11.106

Effect of Oxidant on Downstream Microwave Plasma‐Enhanced CVD of Hafnium Oxynitride Films

Q. Luo, D. W. Hess and W. S. Rees
Chemical Vapor Deposition 12 (2-3) 181 (2006)
https://doi.org/10.1002/cvde.200506440

Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

V. V. Afanas’ev, A. Stesmans, L. F. Edge, D. G. Schlom, T. Heeg and J. Schubert
Applied Physics Letters 88 (3) (2006)
https://doi.org/10.1063/1.2164432

Control of interfacial silicate between HfO2 and Si by high concentration ozone

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 88 (7) (2006)
https://doi.org/10.1063/1.2173708

Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) (2006)
https://doi.org/10.1063/1.2174840

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

S. Dueñas, H. Castán, H. García, A. de Castro, L. Bailón, K. Kukli, A. Aidla, J. Aarik, H. Mändar, T. Uustare, J. Lu and A. Hårsta
Journal of Applied Physics 99 (5) (2006)
https://doi.org/10.1063/1.2177383

Defects in High-k Gate Dielectric Stacks

T.V. PEREVALOV, A.V. SHAPOSHNIKOV, K.A. NASYROV, et al.
NATO Science Series II: Mathematics, Physics and Chemistry, Defects in High-k Gate Dielectric Stacks 220 423 (2006)
https://doi.org/10.1007/1-4020-4367-8_34

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Yang Liu, A. Shanware, L. Colombo and R. Dutton
IEEE Electron Device Letters 27 (6) 489 (2006)
https://doi.org/10.1109/LED.2006.874760

Characterisation of alumina–silica films deposited by ALD

K. E. Prince, P. J. Evans, G. Triani, Z. Zhang and J. Bartlett
Surface and Interface Analysis 38 (12-13) 1692 (2006)
https://doi.org/10.1002/sia.2422

Band offsets of high K gate oxides on III-V semiconductors

J. Robertson and B. Falabretti
Journal of Applied Physics 100 (1) (2006)
https://doi.org/10.1063/1.2213170

Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

Min Xu, Cong-Hui Xu, Shi-Jin Ding, Hong-Liang Lu, David Wei Zhang and Li-Kang Wang
Journal of Applied Physics 99 (7) (2006)
https://doi.org/10.1063/1.2187409

Rare Earth Oxide Thin Films

Sabina Spiga, Claudia Wiemer, Giovanna Scarel, Omar Costa and Marco Fanciulli
Topics in Applied Physics, Rare Earth Oxide Thin Films 106 203 (2006)
https://doi.org/10.1007/11499893_13

Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

A. Fissel, M. Czernohorsky and H. J. Osten
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 24 (4) 2115 (2006)
https://doi.org/10.1116/1.2214702

Defects in High-k Gate Dielectric Stacks

J. ROBERTSON, K. XIONG, S.J. CLARK and S.J. CLARK
NATO Science Series II: Mathematics, Physics and Chemistry, Defects in High-k Gate Dielectric Stacks 220 175 (2006)
https://doi.org/10.1007/1-4020-4367-8_14

A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

M.J. Kumar, V. Venkataraman and S.K. Gupta
IEEE Transactions on Electron Devices 53 (10) 2578 (2006)
https://doi.org/10.1109/TED.2006.882268

Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

A. Stesmans, K. Clémer, P. Somers and V. V. Afanas'ev
MRS Proceedings 984 (2006)
https://doi.org/10.1557/PROC-984-0984-MM08-01

Defects in High-k Gate Dielectric Stacks

WANDA ANDREONI, ALESSANDRO CURIONI, DOMINIK FISCHER, SALOMON R. BILLETER and CARLO A. PIGNEDOLI
NATO Science Series II: Mathematics, Physics and Chemistry, Defects in High-k Gate Dielectric Stacks 220 203 (2006)
https://doi.org/10.1007/1-4020-4367-8_16

Bilayer Organic–Inorganic Gate Dielectrics for High‐Performance, Low‐Voltage, Single‐Walled Carbon Nanotube Thin‐Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates

Q. Cao, M.‐G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
https://doi.org/10.1002/adfm.200600539

The atomic and electron structure of ZrO2

A. V. Shaposhnikov, D. V. Gritsenko, I. P. Petrenko, et al.
Journal of Experimental and Theoretical Physics 102 (5) 799 (2006)
https://doi.org/10.1134/S1063776106050128

Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

A. Fissel, M. Czernohorsky and H.J. Osten
Superlattices and Microstructures 40 (4-6) 551 (2006)
https://doi.org/10.1016/j.spmi.2006.07.002

Thermal stability of amorphous LaScO3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, T. Lee, M. J. Kim, H. S. Craft, J.-P. Maria, M. E. Hawley, B. Holländer, J. Schubert and K. Eisenbeiser
Applied Physics Letters 89 (6) (2006)
https://doi.org/10.1063/1.2222302

Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 89 (26) (2006)
https://doi.org/10.1063/1.2424441

Rare Earth Oxide Thin Films

Gabriele Seguini, Michele Perego and Marco Fanciulli
Topics in Applied Physics, Rare Earth Oxide Thin Films 106 269 (2006)
https://doi.org/10.1007/11499893_16

Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

C. C. Fulton, G. Lucovsky and R. J. Nemanich
Journal of Applied Physics 99 (6) (2006)
https://doi.org/10.1063/1.2181282

Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

A. Rüfenacht, J.-P. Locquet, J. Fompeyrine, D. Caimi and P. Martinoli
Physical Review Letters 96 (22) (2006)
https://doi.org/10.1103/PhysRevLett.96.227002

New Precursors for the CVD of Zirconium and Hafnium Oxide Films

J.-S. M. Lehn, S. Javed and D. M. Hoffman
Chemical Vapor Deposition 12 (5) 280 (2006)
https://doi.org/10.1002/cvde.200506434

Passivation of oxygen vacancy states in HfO2 by nitrogen

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) (2006)
https://doi.org/10.1063/1.2173688

X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O–K absorption edge

E.O. Filatova, P. Jonnard and J.-M. André
Thin Solid Films 500 (1-2) 219 (2006)
https://doi.org/10.1016/j.tsf.2005.11.008

From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

A. Gaudon, F. Lallet, A. Boulle, et al.
Journal of Non-Crystalline Solids 352 (21-22) 2152 (2006)
https://doi.org/10.1016/j.jnoncrysol.2006.02.054

Band offsets of nitrided ultrathin hafnium silicate films

N. T. Barrett, O. Renault, P. Besson, Y. Le Tiec and F. Martin
Applied Physics Letters 88 (16) (2006)
https://doi.org/10.1063/1.2196235

High-K dielectrics for the gate stack

Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine and Jin Won Seo
Journal of Applied Physics 100 (5) (2006)
https://doi.org/10.1063/1.2336996

The structure of the SiO2∕Si(100) interface from a restraint-free search using computer simulations

Dominik Fischer, Alessandro Curioni, Salomon Billeter and Wanda Andreoni
Applied Physics Letters 88 (1) (2006)
https://doi.org/10.1063/1.2158520

Defect states in the high-dielectric-constant gate oxide LaAlO3

K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) (2006)
https://doi.org/10.1063/1.2221521

Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

Koon-Yiu Tse and John Robertson
Journal of Applied Physics 100 (9) (2006)
https://doi.org/10.1063/1.2369645

Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

V. V. Afanas’ev, S. Shamuilia, A. Stesmans, A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, M. Houssa and D. P. Brunco
Applied Physics Letters 88 (13) (2006)
https://doi.org/10.1063/1.2191736

Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(001) and vicinal Si(001)-4°[110] substrates

J. Zachariae and H. Pfnür
Surface Science 600 (13) 2785 (2006)
https://doi.org/10.1016/j.susc.2006.05.002

Interfaces in {100} epitaxial heterostructures of perovskite oxides

J.-L. Maurice, D. Imhoff, J.-P. Contour and C. Colliex
Philosophical Magazine 86 (15) 2127 (2006)
https://doi.org/10.1080/14786430600640460

Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

S. Dueñas, H. Castán, H. García, L. Bailón, K. Kukli, M. Ritala, M. Leskelä, M. Rooth, O. Wilhelmsson and A. Hårsta
Journal of Applied Physics 100 (9) (2006)
https://doi.org/10.1063/1.2358831

Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects

A. Stesmans, K. Clémer, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Applied Physics Letters 89 (11) (2006)
https://doi.org/10.1063/1.2219334

Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank, Steven J. Koester, Matthew Copel, John A. Ott, Vamsi K. Paruchuri, Huiling Shang and Rainer Loesing
Applied Physics Letters 89 (11) (2006)
https://doi.org/10.1063/1.2338751

Diffusion Reaction of Oxygen in HfO2/SiO2/Si Stacks

S. Ferrari and M. Fanciulli
The Journal of Physical Chemistry B 110 (30) 14905 (2006)
https://doi.org/10.1021/jp061788w

Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates

G. Lucovsky, D. M. Fleetwood, S. Lee, et al.
IEEE Transactions on Nuclear Science 53 (6) 3644 (2006)
https://doi.org/10.1109/TNS.2006.886211

Band structure of functional oxides by screened exchange and the weighted density approximation

J. Robertson, K. Xiong and S. J. Clark
physica status solidi (b) 243 (9) 2054 (2006)
https://doi.org/10.1002/pssb.200666802

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Riikka L. Puurunen
Journal of Applied Physics 97 (12) 121301 (2005)
https://doi.org/10.1063/1.1940727

Initial surface reactions in atomic layer deposition of Al2O3on the hydroxylated GaAs(001)-4 × 2 surface

Hong-Liang Lu, Wei Chen, Shi-Jin Ding, et al.
Journal of Physics: Condensed Matter 17 (48) 7517 (2005)
https://doi.org/10.1088/0953-8984/17/48/005