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Lanthanide N,N-Dimethylaminodiboranates: Highly Volatile Precursors for the Deposition of Lanthanide-Containing Thin Films
Scott R. Daly, Do Young Kim, Yu Yang, John R. Abelson and Gregory S. Girolami Journal of the American Chemical Society 132(7) 2106 (2010) https://doi.org/10.1021/ja9098005
Nonvolatile Metal–Oxide–Semiconductor Capacitors with Ru-RuO x Composite Nanodots Embedded in Atomic-Layer-Deposited Al2O3 Films
T. V. Perevalov, O. E. Tereshenko, V. A. Gritsenko, V. A. Pustovarov, A. P. Yelisseyev, Chanjin Park, Jeong Hee Han and Choongman Lee Journal of Applied Physics 108(1) (2010) https://doi.org/10.1063/1.3455843
The Structure and Characterization of ZrO2Thin Films Prepared by Liquid Delivery-MOCVD
First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack
Peter Broqvist, Audrius Alkauskas, Julien Godet and Alfredo Pasquarello Journal of Applied Physics 105(6) (2009) https://doi.org/10.1063/1.3055347
High-k dielectrics for future generation memory devices (Invited Paper)
The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers
Dielectric constant measurement of zeolite powders by time-domain reflectometry
Minwei Sun, Wolfgang Maichen, Ramdas Pophale, Yan Liu, Rui Cai, Christopher M. Lew, Heather Hunt, Michael W. Deem, Mark E. Davis and Yushan Yan Microporous and Mesoporous Materials 123(1-3) 10 (2009) https://doi.org/10.1016/j.micromeso.2009.03.013
Microencapsulation of Moisture-Sensitive CaS:Eu[sup 2+] Particles with Aluminum Oxide
N. Avci, J. Musschoot, P. F. Smet, et al. Journal of The Electrochemical Society 156(11) J333 (2009) https://doi.org/10.1149/1.3211959
Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks
Reliability of La-Doped Hf-Based Dielectrics nMOSFETs
Chang Yong Kang, P.D. Kirsch, Byoung Hun Lee, Hsing-Huang Tseng and R. Jammy IEEE Transactions on Device and Materials Reliability 9(2) 171 (2009) https://doi.org/10.1109/TDMR.2009.2020741
In situ characterization of initial growth of HfO2
Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2/(100)Si interfaces
P. T. Chen, B. B. Triplett, J. J. Chambers, L. Colombo, P. C. McIntyre and Y. Nishi Journal of Applied Physics 104(1) (2008) https://doi.org/10.1063/1.2948922
Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor
M. Ziaur Rahman Khan, D. G. Hasko, M. S. M. Saifullah and M. E. Welland Applied Physics Letters 93(19) (2008) https://doi.org/10.1063/1.3013576
Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity
Localized breakdown in dielectrics and macroscopic charge transport through the whole gate stack: A comparative study
Yi Zheng, Andrew T. S. Wee, Yi Ching Ong, K. L. Pey, Cedric Troadec, Sean J. O’Shea and N. Chandrasekhar Applied Physics Letters 92(1) (2008) https://doi.org/10.1063/1.2830814
Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics
Structural and dielectric properties of epitaxial Sm2O3 thin films
H. Yang, H. Wang, H. M. Luo, D. M. Feldmann, P. C. Dowden, R. F. DePaula and Q. X. Jia Applied Physics Letters 92(6) (2008) https://doi.org/10.1063/1.2842416
On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces
Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO
3
/SrTiO
3
interface as a function of LaAIO
3
growth conditions
Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy
Yi Zheng, Andrew T. S. Wee, K. L. Pey, Cedric Troadec, S. J. O’Shea and N. Chandrasekhar Applied Physics Letters 90(14) (2007) https://doi.org/10.1063/1.2720346
Ultrahigh resolution imaging of local structural distortions in intergrowth tungsten bronzes
Damascene technique applied to surface acoustic wave devices
Daniel Reitz, Juergen Thomas, Hagen Schmidt, Siegfried Menzel, Klaus Wetzig, Matthias Albert and Johann W. Bartha Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 25(1) 271 (2007) https://doi.org/10.1116/1.2404684
Effect of Al addition on the microstructure and electronic structure of HfO2 film
X. F. Wang, Quan Li, R. F. Egerton, P. F. Lee, J. Y. Dai, Z. F. Hou and X. G. Gong Journal of Applied Physics 101(1) (2007) https://doi.org/10.1063/1.2405741
Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations
T. V. Perevalov, V. A. Gritsenko, S. B. Erenburg, A. M. Badalyan, Hei Wong and C. W. Kim Journal of Applied Physics 101(5) (2007) https://doi.org/10.1063/1.2464184
Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3
Analysis of the (100)Si/LaAlO3 structure by electron spin resonance: nature of the interface
K. Clémer, A. Stesmans, V. V. Afanas’ev, L. F. Edge and D. G. Schlom Journal of Materials Science: Materials in Electronics 18(7) 735 (2007) https://doi.org/10.1007/s10854-006-9072-9
Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures
A. G. Marinopoulos, I. Batyrev, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides Applied Physics Letters 91(23) (2007) https://doi.org/10.1063/1.2820380
Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation