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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing
Investigation of forming-gas annealed CeO2 thin film on GaN
Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman Journal of Materials Science: Materials in Electronics 22(6) 583 (2011) https://doi.org/10.1007/s10854-010-0181-0
Electrical, Structural and Interfacial Characterization of HfO
2
Films on Si Substrates
In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates
K. Devloo-Casier, J. Dendooven, K. F. Ludwig, G. Lekens, J. D’Haen and C. Detavernier Applied Physics Letters 98(23) (2011) https://doi.org/10.1063/1.3598433
Noncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric
J. L. Everaert, E. Rosseel, A. Pap, et al. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29(1) 01AB05 (2011) https://doi.org/10.1116/1.3521384
High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition
Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, James D. Dutson, Steve J. Wakeham, Mike J. Thwaites, William I. Milne and Andrew J. Flewitt Applied Physics Letters 98(25) (2011) https://doi.org/10.1063/1.3601487
Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles
Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate
H. J. Quah, K. Y. Cheong, Z. Hassan and Z. Lockman Journal of The Electrochemical Society 158(4) H423 (2011) https://doi.org/10.1149/1.3548542
Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs
Structure, Sodium Ion Role, and Practical Issues for β-alumina as a High-k Solution-Processed Gate Layer for Transparent and Low-Voltage Electronics
Bo Zhang, Yu Liu, Shweta Agarwal, Ming-Ling Yeh and Howard E. Katz ACS Applied Materials & Interfaces 3(11) 4254 (2011) https://doi.org/10.1021/am2009103
Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate
Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman IEEE Transactions on Electron Devices 58(1) 122 (2011) https://doi.org/10.1109/TED.2010.2087024
UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al2O3 nanoparticles
Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films
M. Hartmanová, V. Navrátil, V. Buršíková, F. Kundracik and C. Mansilla Russian Journal of Electrochemistry 47(5) 505 (2011) https://doi.org/10.1134/S1023193511050041
Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application
A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode
R. Rao, R. Simoncini, H. D. B. Gottlob, M. Schmidt and F. Irrera Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29(1) (2011) https://doi.org/10.1116/1.3521385
LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3
TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer
Qi Xie, Jan Musschoot, Marc Schaekers, et al. Electrochemical and Solid-State Letters 14(5) G27 (2011) https://doi.org/10.1149/1.3559770
Ab initio simulation of the electronic structure of δ-Ta2O5 with oxygen vacancy and comparison with experiment
M. V. Ivanov, T. V. Perevalov, V. Sh. Aliev, V. A. Gritsenko and V. V. Kaichev Journal of Experimental and Theoretical Physics 112(6) 1035 (2011) https://doi.org/10.1134/S1063776111050037
Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates
Xinqiang Zhang, Hailing Tu, Hongbin Zhao, Mengmeng Yang, Xiaona Wang, Yuhua Xiong, Zhimin Yang, Jun Du, Wenwu Wang and Dapeng Chen Applied Physics Letters 99(13) (2011) https://doi.org/10.1063/1.3643470
UV-protection and photocatalytic properties of electrospun polyacrylonitrile nanofibrous mats coated with TiO2 nanofilm via sol–gel
Saeed Dadvar, Hossein Tavanai, Hamid Dadvar, Mohammad Morshed and Farhad E. Ghodsi Journal of Sol-Gel Science and Technology 59(2) 269 (2011) https://doi.org/10.1007/s10971-011-2495-7
Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors
R. Driad, F. Benkhelifa, L. Kirste, M. Mikulla and O. Ambacher Journal of The Electrochemical Society 158(12) H1279 (2011) https://doi.org/10.1149/2.060112jes
Fabrication of polycrystalline aluminum oxide thin films via hydrolysis and hydrothermal reactions in solutions
Effect of postdeposition annealing on electrical properties of RF‐magnetron sputtered CeOx gate on 4H‐silicon carbide
SooKiet Chuah, KuanYew Cheong, Zainovia Lockman and Zainuriah Hassan physica status solidi (a) 208(8) 1925 (2011) https://doi.org/10.1002/pssa.201127154
Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates
Hyun‐Joong Chung, Tae‐il Kim, Hoon‐Sik Kim, Spencer A. Wells, Sungjin Jo, Numair Ahmed, Yei Hwan Jung, Sang Min Won, Christopher A. Bower and John A. Rogers Advanced Functional Materials 21(16) 3029 (2011) https://doi.org/10.1002/adfm.201100124
Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient
Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics
Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat and Paul C. McIntyre Applied Physics Letters 98(3) (2011) https://doi.org/10.1063/1.3527977
Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode
Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique
Soo Kiet Chuah, Kuan Yew Cheong, Zainovia Lockman and Zainuriah Hassan Materials Science in Semiconductor Processing 14(2) 101 (2011) https://doi.org/10.1016/j.mssp.2011.01.007
Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer
Yung-Hsien Wu, Jia-Rong Wu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin Journal of The Electrochemical Society 158(4) H410 (2011) https://doi.org/10.1149/1.3547717
Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering
Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications
Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson The Journal of Physical Chemistry B 115(46) 13419 (2011) https://doi.org/10.1021/jp205428j
Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators
Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang IEEE Electron Device Letters 32(12) 1755 (2011) https://doi.org/10.1109/LED.2011.2167010
Development of hafnium based high-k materials—A review
Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures
Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra Applied Physics Letters 96(9) (2010) https://doi.org/10.1063/1.3355547
Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates
H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28(4) C5B5 (2010) https://doi.org/10.1116/1.3425637
Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories
Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface
Rosario Rao, Paolo Lorenzi, Gabriella Ghidini, Fabrizio Palma and Fernanda Irrera IEEE Transactions on Electron Devices 57(3) 637 (2010) https://doi.org/10.1109/TED.2009.2039100
Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy
Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
J. L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Meszaros, K. Kis-Szabo and T. Pavelka Applied Physics Letters 96(12) (2010) https://doi.org/10.1063/1.3373920
Ultrathin SiO2layer with a low leakage current density formed with ∼ 100% nitric acid vapor
High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization
H. Döscher, G. Lilienkamp, P. Iskra, W. Daum, G. Helsch, S. Becker, R. J. Wrobel, H. Weiss and Y. Suchorski Journal of Applied Physics 107(9) (2010) https://doi.org/10.1063/1.3340830
Application and electronic structure of high-permittivity dielectrics
Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices
Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness
Minhyeok Choe, Gunho Jo, Jongsun Maeng, Woong-Ki Hong, Minseok Jo, Gunuk Wang, Woojin Park, Byoung Hun Lee, Hyunsang Hwang and Takhee Lee Journal of Applied Physics 107(3) (2010) https://doi.org/10.1063/1.3298910
Electronic structure of aluminum oxide: ab initio simulations ofαandγphases and comparison with experiment for amorphous films
T. V. Perevalov, V. A. Gritsenko and V. V. Kaichev The European Physical Journal Applied Physics 52(3) 30501 (2010) https://doi.org/10.1051/epjap/2010159
Oxygen vacancy estimation of high k metal gate using thermal dynamic model
Comparative electron spin resonance study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si interfaces: Misfit point defects
P. Somers, A. Stesmans, V. V. Afanas’ev, W. Tian, L. F. Edge and D. G. Schlom Journal of Applied Physics 107(9) (2010) https://doi.org/10.1063/1.3326516
Muhammad M. Hussain, Denis Shamiryan, Vasile Paraschiv, Kenichi Sano and Karen A. Reinhardt 237 (2010) https://doi.org/10.1002/9781118071748.ch7
Effects of Postdeposition Annealing in Argon Ambient on Metallorganic Decomposed CeO[sub 2] Gate Spin Coated on Silicon
H. J. Quah, K. Y. Cheong, Z. Hassan, et al. Journal of The Electrochemical Society 157(1) H6 (2010) https://doi.org/10.1149/1.3244214
Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments
V. A. Pustovarov, V. Sh. Aliev, T. V. Perevalov, V. A. Gritsenko and A. P. Eliseev Journal of Experimental and Theoretical Physics 111(6) 989 (2010) https://doi.org/10.1134/S1063776110120113