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Growth and properties of crystalline barium oxide on the GaAs(100) substrate
M. Yasir, J. Dahl, M. Kuzmin, J. Lång, M. Tuominen, M. P. J. Punkkinen, P. Laukkanen, K. Kokko, V.-M. Korpijärvi, V. Polojärvi and M. Guina Applied Physics Letters 103(19) (2013) https://doi.org/10.1063/1.4828794
Optical susceptibilities in singly charged ZnO colloidal quantum dots embedded in different dielectric matrices
Zaiping Zeng, Emmanuel Paspalakis, Christos S. Garoufalis, Andreas F. Terzis and Sotirios Baskoutas Journal of Applied Physics 113(5) (2013) https://doi.org/10.1063/1.4789363
Band offsets in transition-metal oxide heterostructures
Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
Jiro Yota, Hong Shen and Ravi Ramanathan Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31(1) (2013) https://doi.org/10.1116/1.4769207
Leakage current in high dielectric oxides: Role of defect-induced energies
P. Maleeswaran, D. Nagulapally, R. P. Joshi and A. K. Pradhan Journal of Applied Physics 113(18) (2013) https://doi.org/10.1063/1.4804134
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Dayu Zhou, Jin Xu, Qing Li, Yan Guan, Fei Cao, Xianlin Dong, Johannes Müller, Tony Schenk and Uwe Schröder Applied Physics Letters 103(19) (2013) https://doi.org/10.1063/1.4829064
Transport mechanisms of electrons and holes in dielectric films
Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material
Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu and Mark L. Brongersma Optics Express 21(22) 26387 (2013) https://doi.org/10.1364/OE.21.026387
Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure
Wattaka Sitaputra and Raphael Tsu Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31(2) (2013) https://doi.org/10.1116/1.4793264
White light emission from alternating current organic light-emitting devices using high frequency color-mixing
First-Principles Studies of the Electronic and Dielectric Properties of Si/SiO2/HfO2Interfaces
Yongjin Park, Ki-jeong Kong, Hyunju Chang and Mincheol Shin Japanese Journal of Applied Physics 52(4R) 041803 (2013) https://doi.org/10.7567/JJAP.52.041803
Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-kgate dielectrics
Sulagna Chatterjee, Basudev Nag Chowdhury, Anindita Das and Sanatan Chattopadhyay Semiconductor Science and Technology 28(12) 125011 (2013) https://doi.org/10.1088/0268-1242/28/12/125011
Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices
Sejoon Lee, Emil B. Song, Sung Min Kim, Youngmin Lee, David H. Seo, Sunae Seo and Kang L. Wang Applied Physics Letters 101(24) (2012) https://doi.org/10.1063/1.4770381
Mechanism of photocatalytic activities in Cr-doped SrTiO3 under visible-light irradiation: an insight from hybrid density-functional calculations
Qian Chen, Henrique L. Gomes, Asal Kiazadeh, et al. IFIP Advances in Information and Communication Technology, Technological Innovation for Value Creation 372 527 (2012) https://doi.org/10.1007/978-3-642-28255-3_58
Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides
Masato Senami, Yasushi Tsuchida, Akinori Fukushima, Yuji Ikeda and Akitomo Tachibana Japanese Journal of Applied Physics 51(3R) 031101 (2012) https://doi.org/10.7567/JJAP.51.031101
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode
S. Spiga, R. Rao, L. Lamagna, C. Wiemer, G. Congedo, A. Lamperti, A. Molle, M. Fanciulli, F. Palma and F. Irrera Journal of Applied Physics 112(1) (2012) https://doi.org/10.1063/1.4731746
Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering
Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
Steven A. Vitale, Peter W. Wyatt and Chris J. Hodson Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30(1) (2012) https://doi.org/10.1116/1.3664756
Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy
A. K. Rumaiz, J. C. Woicik, C. Weiland, Q. Xie, D. P. Siddons, G. H. Jaffari and C. Detavernier Applied Physics Letters 101(22) (2012) https://doi.org/10.1063/1.4768947
Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics
Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao and Tung-Ming Pan Applied Physics Letters 100(17) (2012) https://doi.org/10.1063/1.4705472
Model Surfaces Produced by Atomic Layer Deposition
Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
Jung-Kyu Lee, Sunghun Jung, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il Hwan Cho, Hyuck-In Kwon, Chan Hyeong Park, Byung-Gook Park and Jong-Ho Lee Applied Physics Letters 101(10) (2012) https://doi.org/10.1063/1.4751248
Revealing the Surface Reactivity of Zirconia by Periodic DFT Calculations
Olga A. Syzgantseva, Monica Calatayud and Christian Minot The Journal of Physical Chemistry C 116(11) 6636 (2012) https://doi.org/10.1021/jp209898q
Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers
J. A. Caraveo-Frescas, M. N. Hedhili, H. Wang, U. Schwingenschlögl and H. N. Alshareef Applied Physics Letters 100(10) (2012) https://doi.org/10.1063/1.3692580
D. Koh, J. H. Yum, T. Akyol, D. A. Ferrer, M. Lei, Todd. W. Hudnall, M. C. Downer, C. W. Bielawski, R. Hill, G. Bersuker and S. K. Banerjee 163 (2012) https://doi.org/10.1109/ICIPRM.2012.6403347
Impact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/Al2O3 stacking dielectrics
Hong-Bo Wang, Da-Yan Ma, Fei Ma and Ke-Wei Xu Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30(4) (2012) https://doi.org/10.1116/1.4732737
Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films
Dayu Zhou, J. Müller, Jin Xu, S. Knebel, D. Bräuhaus and U. Schröder Applied Physics Letters 100(8) (2012) https://doi.org/10.1063/1.3688915
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces
Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene
B. Dlubak, M.-B. Martin, C. Deranlot, K. Bouzehouane, S. Fusil, R. Mattana, F. Petroff, A. Anane, P. Seneor and A. Fert Applied Physics Letters 101(20) (2012) https://doi.org/10.1063/1.4765348
Bound and resonant impurity states in a narrow gapped armchair graphene nanoribbon
Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties
Preparation and properties of BaTiO3/porous oxide composites
V. V. Sydorchuk, S. V. Khalameida, V. P. Klimenko, V. A. Mikheev and V. A. Zazhigalov Inorganic Materials 48(9) 925 (2012) https://doi.org/10.1134/S0020168512090142
Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix
Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN
Rathnait D. Long, Aryan Hazeghi, Marika Gunji, Yoshio Nishi and Paul C. McIntyre Applied Physics Letters 101(24) (2012) https://doi.org/10.1063/1.4769827
Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks
Ferney A. Chaves, David Jimenez, Francisco J. Garcia Ruiz, Andrés Godoy and Jordi Sune IEEE Transactions on Electron Devices 59(10) 2589 (2012) https://doi.org/10.1109/TED.2012.2206597
LanthanideN,N-Dimethylaminodiboranates as a New Class of Highly Volatile Chemical Vapor Deposition Precursors
Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5
Youngbae Ahn, Seung Wook Ryu, Jong Ho Lee, Ji Woon Park, Gun Hwan Kim, Young Seok Kim, Jaeyeong Heo, Cheol Seong Hwang and Hyeong Joon Kim Journal of Applied Physics 112(10) (2012) https://doi.org/10.1063/1.4766415