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Laura Nyns, Judit G. Lisoni, Geert Van den Bosch, Sven Van Elshocht and Jan Van Houdt physica status solidi (a) 211(2) 409 (2014) https://doi.org/10.1002/pssa.201330080
Solar water oxidation in sputter-deposited nanocrystalline WO3 photoanodes via tuning of Ar:O2 flow rate combinations
Phase control of HfO2-based dielectric films for higher-k materials
Jae Ho Lee, Il-Hyuk Yu, Sang Young Lee and Cheol Seong Hwang Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32(3) 03D109 (2014) https://doi.org/10.1116/1.4862952
Conduction and field induced degradation in thin ZrO2 films sputtered in nitrogen containing plasma on silicon
Ashwath Rao, Joyline D’sa, Saurabh Goyal and B. R. Singh Journal of Materials Science: Materials in Electronics 25(3) 1583 (2014) https://doi.org/10.1007/s10854-014-1772-y
Characterization of Ta–Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry
Mu Fan, Kirill Sliozberg, Fabio La Mantia, Naoko Miyashita, Marcel Hagymási, Christoph Schnitter, Alfred Ludwig and Wolfgang Schuhmann ChemElectroChem 1(5) 903 (2014) https://doi.org/10.1002/celc.201300153
Polaronic phase transitions and complex permittivity of solid polar insulators with gigantic dielectric response
Giant dielectric constant in TiO2/Al2O3 nanolaminates grown on doped silicon substrate by pulsed laser deposition
P. Walke, R. Bouregba, A. Lefevre, G. Parat, F. Lallemand, F. Voiron, B. Mercey and U. Lüders Journal of Applied Physics 115(9) (2014) https://doi.org/10.1063/1.4867780
Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors
Sang Yeon Lee, Jaewan Chang, Younsoo Kim, HanJin Lim, Hyeongtag Jeon and Hyungtak Seo Applied Physics Letters 105(20) (2014) https://doi.org/10.1063/1.4902244
Ta2O5-based high-K dielectric thin films from solution processed at low temperatures
Electronic stopping force of 12C, 28Si and 63Cu ions in HfO2 and SiO2 dielectric films
M. Msimanga, C.A. Pineda-Vargas, T. Hlatshwayo, et al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 322 54 (2014) https://doi.org/10.1016/j.nimb.2014.01.003
Control of the Dirac point in graphene by UV light
Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory
M. Popovici, J. Swerts, A. Redolfi, B. Kaczer, M. Aoulaiche, I. Radu, S. Clima, J.-L. Everaert, S. Van Elshocht and M. Jurczak Applied Physics Letters 104(8) (2014) https://doi.org/10.1063/1.4866860
Hafnia–Silica Cryogels: Solvent‐Assisted Textural and Catalytic Control in the Citronellal Cyclization
Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
Nelson Y. Garces, David J. Meyer, Virginia D. Wheeler, Zuzanna Liliental-Weber, David K. Gaskill and Charles R. Eddy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32(3) (2014) https://doi.org/10.1116/1.4818254
High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal and John W. Palmour Applied Physics Letters 105(18) (2014) https://doi.org/10.1063/1.4901259
High dielectric material dependence of carbon nanotube field effect transistor considering non‐ballistic conduction
Nirjhor Tahmidur Rouf, Ashfaqul Haq Deep, Rusafa Binte Hassan, Sabbir Ahmed Khan, Mahmudul Hasan and Sharif Mohammad Mominuzzaman Micro & Nano Letters 9(10) 620 (2014) https://doi.org/10.1049/mnl.2014.0268
Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics
Seung‐Kyun Kang, Suk‐Won Hwang, Huanyu Cheng, Sooyoun Yu, Bong Hoon Kim, Jae‐Hwan Kim, Yonggang Huang and John A. Rogers Advanced Functional Materials 24(28) 4427 (2014) https://doi.org/10.1002/adfm.201304293
High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission
Growth of high-density Ir nanocrystals by atomic layer deposition for nonvolatile nanocrystal memory applications
Xiao-Jie Liu, Lin Zhu, Xue-Fei Li, Zheng-Yi Cao, Ai-Dong Li and Di Wu Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32(4) (2014) https://doi.org/10.1116/1.4878942
Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices
Proceedings of the International Conference on Science, Technology and Social Sciences (ICSTSS) 2012
Hock Jin Quah and Kuan Yew Cheong Proceedings of the International Conference on Science, Technology and Social Sciences (ICSTSS) 2012 649 (2014) https://doi.org/10.1007/978-981-287-077-3_77
Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction
A. Proessdorf, M. Niehle, M. Hanke, F. Grosse, V. Kaganer, O. Bierwagen and A. Trampert Applied Physics Letters 105(2) (2014) https://doi.org/10.1063/1.4890107
Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides
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Yu. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin, E. O. Filatova and V. E. Asadchikov Crystallography Reports 58(1) 160 (2013) https://doi.org/10.1134/S1063774513010148
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI and Seiichi MIYAZAKI IEICE Transactions on Electronics E96.C(5) 674 (2013) https://doi.org/10.1587/transele.E96.C.674
J. Yu, Y. Liu, F.X. Cai, M. Shafiei, G. Chen, N. Motta, W. Wlodarski, K. Kalantar-zadeh and P.T. Lai 191 (2013) https://doi.org/10.1109/NEMS.2013.6559712
Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes
Rosario Rao and Fernanda Irrera Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31(1) (2013) https://doi.org/10.1116/1.4774105
Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests
Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition
Alex M. Ma, Manisha Gupta, Amir Afshar, Gem Shoute, Ying Y. Tsui, Kenneth C. Cadien and Douglas W. Barlage Applied Physics Letters 103(25) (2013) https://doi.org/10.1063/1.4836955
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Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers
Paragkumar A. Thadesar and Muhannad S. Bakir IEEE Transactions on Components, Packaging and Manufacturing Technology 3(7) 1130 (2013) https://doi.org/10.1109/TCPMT.2013.2261122
Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films
High performance ink-jet printed diketopyrrolopyrrole-based copolymer thin-film transistors using a solution-processed aluminium oxide dielectric on a flexible substrate
Arif Khan, Saeed Ganji and S. Noor Mohammad Lecture Notes in Nanoscale Science and Technology, Toward Quantum FinFET 17 25 (2013) https://doi.org/10.1007/978-3-319-02021-1_2
Enhancing the efficiency of alternating current driven organic light-emitting devices by optimizing the operation frequency
In situ monitoring of electrostriction in anodic and thermal silicon dioxide thin films
Frédéric Blaffart, Quentin Van Overmeere, Thomas Pardoen and Joris Proost Journal of Solid State Electrochemistry 17(7) 1945 (2013) https://doi.org/10.1007/s10008-013-2036-0
Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses
Jacques Levrat, Georg Rossbach, Raphaël Butté and Nicolas Grandjean Springer Series in Solid-State Sciences, Physics of Quantum Fluids 177 201 (2013) https://doi.org/10.1007/978-3-642-37569-9_10
Hydrolysis of ZrCl4and HfCl4: The Initial Steps in the High-Temperature Oxidation of Metal Chlorides to Produce ZrO2and HfO2
Probing the properties of atomic layer deposited ZrO2 films on p-Germanium substrates
Ariadne P. Kerasidou, Martha A. Botzakaki, Nikolaos Xanthopoulos, Stella Kennou, Spyridon Ladas, Stavroula N. Georga and Christoforos A. Krontiras Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31(1) (2013) https://doi.org/10.1116/1.4768166
A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation
Thin Films of High‐k Oxides and ZnO for Transparent Electronic Devices
Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Elzbieta Guziewicz and Marek Godlewski Chemical Vapor Deposition 19(4-6) 213 (2013) https://doi.org/10.1002/cvde.201207029
High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface
Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate
V. Mikhelashvili, B. Meyler, Y. Shneider, S. Yofis, J. Salzman, G. Atiya, T. Cohen-Hyams, G. Ankonina, W. D. Kaplan, M. Lisiansky, Y. Roizin and G. Eisenstein Journal of Applied Physics 113(7) (2013) https://doi.org/10.1063/1.4791761
Transport mechanisms of electrons and holes in dielectric films
Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation
Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes Journal of Applied Physics 114(8) (2013) https://doi.org/10.1063/1.4819214
Nanoscale channel engineered double gate MOSFET for mixed signal applications using high‐k dielectric
D Nirmal, P Vijayakumar, K Shruti and N Mohankumar International Journal of Circuit Theory and Applications 41(6) 608 (2013) https://doi.org/10.1002/cta.1800
Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen
High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films
Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, Stuart P. Speakman, Caterina Ducati, William I. Milne and Andrew J. Flewitt physica status solidi (b) 250(5) 957 (2013) https://doi.org/10.1002/pssb.201248520
Atomic and electronic structures of lutetium oxide Lu2O3