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Capacitive effective thickness of a few nanometers by atomic layer deposition and device performance in Ge gate-all-around fin field effect transistors
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Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen
E. V. Ivanova, M. V. Zamoryanskaya, V. A. Pustovarov, et al. Journal of Experimental and Theoretical Physics 120(4) 710 (2015) https://doi.org/10.1134/S1063776115020132
Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures
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Computed and Experimental Absorption Spectra of the Perovskite CH3NH3PbI3
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Electromagnetic Performance of RF NEMS Graphene Capacitive Switches
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High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy
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Qingfeng Zeng, Artem R. Oganov, Andriy O. Lyakhov, et al. Acta Crystallographica Section C Structural Chemistry 70(2) 76 (2014) https://doi.org/10.1107/S2053229613027861
CMUTs with high-K atomic layer deposition dielectric material insulation layer
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric
Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia
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Intersublevel Photoabsorption and Photoelectric Processes in ZnO Quantum Dot Embedded in $\hbox{HfO}_{2}$ and AlN Matrices