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Cited article:

Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization

Y. Khlifi, K. Kassmi, A. Aziz, F. Olivie

Eur. Phys. J. Appl. Phys., 28 1 (2004) 27-41

Published online: 2004-06-25

DOI: https://doi.org/10.1051/epjap:2004157

This article has been cited by the following article(s):

Quantum charge transportation in metal-oxide-Si structures with ultrathin oxide

V. Filip, Hei Wong and D. Nicolaescu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24 (1) 38 (2006)
https://doi.org/10.1116/1.2138720

Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO2/metal structures

V. Filip, Hei Wong and D. Nicolaescu
Microelectronics Reliability 46 (7) 1027 (2006)
https://doi.org/10.1016/j.microrel.2005.10.014