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Cited article:

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Łukasz Gelczuk, Maria Dąbrowska-Szata, Beata Ściana, et al.
Materials Science-Poland 34 (4) 726 (2016)
https://doi.org/10.1515/msp-2016-0126

Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy

Ł. Gelczuk, H. Stokowski, M. Dąbrowska-Szata and R. Kudrawiec
Journal of Applied Physics 119 (18) (2016)
https://doi.org/10.1063/1.4949514

Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

Ł. Gelczuk, R. Kudrawiec and M. Henini
Journal of Applied Physics 116 (1) (2014)
https://doi.org/10.1063/1.4886856

Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers

K. Dornich, T. Hahn and J.R. Niklas
MRS Proceedings 864 (2005)
https://doi.org/10.1557/PROC-864-E11.2