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Cited article:

Nonlinear Optical Techniques for Characterization of Wide Bandgap Semiconductor Electronic Properties: III-nitrides, SiC, and Diamonds

Kęstutis Jarašiūnas, Ramūnas Aleksiejūnas, Tadas Malinauskas, Saulius Nargelas and Patrik Ščajev
MRS Proceedings 1396 (2012)
https://doi.org/10.1557/opl.2012.497

Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique

S. Nargelas, K. Jarašiūnas, K. Bertulis and V. Pačebutas
Applied Physics Letters 98 (8) (2011)
https://doi.org/10.1063/1.3557047

Studies of photoconductance decay method for characterization of near-surface electrical properties of semiconductors

P.J. Drummond, D. Bhatia, A. Kshirsagar, S. Ramani and J. Ruzyllo
Thin Solid Films 519 (22) 7621 (2011)
https://doi.org/10.1016/j.tsf.2011.04.212

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique

T. Malinauskas, K. Jarašiūnas, E. Ivakin, N. Tranchant and M. Nesladek
physica status solidi (a) 207 (9) 2058 (2010)
https://doi.org/10.1002/pssa.201000100

Optical discrimination of deep trap contribution to carrier recombination in semi-insulating crystals

A. Kadys, K. Jarašiūnas and D. Verstraeten
Journal of Applied Physics 106 (1) (2009)
https://doi.org/10.1063/1.3158054

On Optical Characterization of Carrier Lifetimes in GaN Layers by Time-Resolved Four-Wave Mixing and Photoluminescence Techniques

T. Malinauskas and K. Jarašiūnas
Acta Physica Polonica A 108 (5) 781 (2005)
https://doi.org/10.12693/APhysPolA.108.781