Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Deep-level defects in high-voltage AlGaAs p–i–n diodes and the effect of these defects on the temperature dependence of the minority carrier lifetime

M. M. Sobolev, F. Y. Soldatenkov and V. G. Danil'chenko
Journal of Applied Physics 128 (9) (2020)
https://doi.org/10.1063/5.0018317

Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers

M. M. Sobolev, F. Yu. Soldatenkov and I. L. Shul'pina
Journal of Applied Physics 123 (16) (2018)
https://doi.org/10.1063/1.5011297

Surface acceptor states in MBE-grown CdTe layers

Karolina Wichrowska, Tadeusz Wosinski, Zbigniew Tkaczyk, Valery Kolkovsky and Grzegorz Karczewski
Journal of Applied Physics 123 (16) (2018)
https://doi.org/10.1063/1.4986157

Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers

M. M. Sobolev and F. Yu. Soldatenkov
Semiconductors 52 (2) 165 (2018)
https://doi.org/10.1134/S1063782618020173

Anomalous deep-level transients related to quantum well piezoelectric fields inInyGa1−yN∕GaN-heterostructure light-emitting diodes

L. Rigutti, A. Castaldini and A. Cavallini
Physical Review B 77 (4) (2008)
https://doi.org/10.1103/PhysRevB.77.045312

Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, In-Hwan Lee, Cheul Ro Lee and S. J. Pearton
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26 (3) 990 (2008)
https://doi.org/10.1116/1.2919148

Capture kinetics at deep‐level electron traps in GaN‐based laser diode

O. Yastrubchak, T. Wosiński, A. Mąkosa, T. Figielski, S. Porowski, I. Grzegory, R. Czernecki and P. Perlin
physica status solidi c 4 (8) 2878 (2007)
https://doi.org/10.1002/pssc.200675432

Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov and S. J. Pearton
physica status solidi c 3 (6) 2087 (2006)
https://doi.org/10.1002/pssc.200565195