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Cited article:

Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM

T. Umeda, A. Toda, Y. Mochizuki

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 13-19

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004123

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