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Cited article:

Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers

C. Díaz-Guerra, J. Piqueras

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 227-230

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004091

This article has been cited by the following article(s):

Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging

Aman Arora, Ankit Patel, Brajesh S. Yadav, et al.
Microscopy and Microanalysis 27 (1) 215 (2021)
https://doi.org/10.1017/S1431927621000039

4H-SiC band structure investigated by surface photovoltage spectroscopy

F. Fabbri, D. Cavalcoli and A. Cavallini
Acta Materialia 60 (8) 3350 (2012)
https://doi.org/10.1016/j.actamat.2012.02.047

Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC

F. Fabbri and A. Cavallini
Journal of Applied Physics 108 (1) (2010)
https://doi.org/10.1063/1.3456160

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC()

S.M. Bishop, C.L. Reynolds, J.C. Molstad, et al.
Applied Surface Science 255 (13-14) 6535 (2009)
https://doi.org/10.1016/j.apsusc.2009.02.036