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Cited article:

Stacking faults in 4H–SiC epilayers and IGBTs

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Materials Science in Semiconductor Processing 177 108369 (2024)
https://doi.org/10.1016/j.mssp.2024.108369

Formation mechanism of Type 2 micropipe defects in 4H–SiC crystals

C. J. Liu, T. H. Peng, S. C. Wang, et al.
CrystEngComm 15 (7) 1307 (2013)
https://doi.org/10.1039/c2ce26329g

Stacking faults in intrinsic and N-doped 4H–SiC: true influence of the N-doping on their multiplicity

Gabrielle Regula, Maryse Lancin, Bernard Pichaud, et al.
Philosophical Magazine 93 (10-12) 1317 (2013)
https://doi.org/10.1080/14786435.2012.745018

Triple Shockley type stacking faults in 4H-SiC epilayers

Gan Feng, Jun Suda and Tsunenobu Kimoto
Applied Physics Letters 94 (9) (2009)
https://doi.org/10.1063/1.3095508

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Serguei I. Maximenko, Jaime A. Freitas, Paul B. Klein, Amitesh Shrivastava and Tangali S. Sudarshan
Applied Physics Letters 94 (9) (2009)
https://doi.org/10.1063/1.3089231

Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping

Gan Feng, Jun Suda and Tsunenobu Kimoto
Applied Physics Letters 92 (22) 221906 (2008)
https://doi.org/10.1063/1.2937097

Degradation of hexagonal silicon-carbide-based bipolar devices

M. Skowronski and S. Ha
Journal of Applied Physics 99 (1) 011101 (2006)
https://doi.org/10.1063/1.2159578