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Cited article:

TEM measurement of the misfit stress by a curvature method in semiconducting epitaxial system

A. Ponchet, M. Cabié, A. Rocher

Eur. Phys. J. Appl. Phys., 26 2 (2004) 87-94

Published online: 2004-03-29

DOI: https://doi.org/10.1051/epjap:2004026

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Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

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