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Cited article:

New insight into the modulated photocurrent technique using 2D full numerical simulations

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Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

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Philosophical Magazine 94 (21) 2447 (2014)
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Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate

M. Y. Soro, M. E. Gueunier-Farret and J. P. Kleider
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The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors

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Philosophical Magazine 90 (25) 3441 (2010)
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Modulated photoconductivity in the high and low frequency regimes

J.A. Schmidt, C. Longeaud, R.R. Koropecki, R. Arce and J.P. Kleider
Journal of Non-Crystalline Solids 354 (19-25) 2914 (2008)
https://doi.org/10.1016/j.jnoncrysol.2007.09.104

Low frequency modulated photoconductivity in semiconductors having multiple species of traps

J. A. Schmidt, C. Longeaud, R. R. Koropecki and R. Arce
Journal of Applied Physics 101 (10) (2007)
https://doi.org/10.1063/1.2732442

Determination of semiconductor band gap state parameters from photoconductivity measurements. II. Experimental results

C. Longeaud, J. A. Schmidt and R. R. Koropecki
Physical Review B 73 (23) (2006)
https://doi.org/10.1103/PhysRevB.73.235317

Determination of semiconductor band gap state parameters from photoconductivity measurements. I. Theoretical developments

C. Longeaud, J. A. Schmidt and J. P. Kleider
Physical Review B 73 (23) (2006)
https://doi.org/10.1103/PhysRevB.73.235316