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Cited article:

Depth profiling of P shallow implants in silicon by electron-induced X-ray emission spectroscopy

Ch. Hombourger, Ph. Jonnard, Ch. Bonnelle, P.-F. Staub

Eur. Phys. J. Appl. Phys., 24 2 (2003) 115-119

Published online: 2003-10-20

DOI: https://doi.org/10.1051/epjap:2003078

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