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Cited article:

Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

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Materials Science in Semiconductor Processing 16 (5) 1336 (2013)
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Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J. C. Moreno, S. Rennesson and Y. Cordier
Applied Physics Letters 102 (9) (2013)
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Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer

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https://doi.org/10.7498/aps.61.247302

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

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IEEE Transactions on Electron Devices 59 (9) 2424 (2012)
https://doi.org/10.1109/TED.2012.2204888

Thermal behavior analysis of GaN based epi‐material on different substrates by means of a physical–thermal model

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physica status solidi (a) 207 (8) 1820 (2010)
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Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

N. Defrance, Y. Douvry, V. Hoel, et al.
Electronics Letters 46 (13) 949 (2010)
https://doi.org/10.1049/el.2010.0431

SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices

Raphal Aubry, Jean-Claude Jacquet, J. Weaver, et al.
IEEE Transactions on Electron Devices 54 (3) 385 (2007)
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Realization of AlGaN/GaN HEMTs on Si‐on‐polySiC substrates

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physica status solidi c 4 (7) 2670 (2007)
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High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry and C. Gaquière
Microwave and Optical Technology Letters 48 (11) 2303 (2006)
https://doi.org/10.1002/mop.21897