Article references

Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Extended generation profile - E.B.I.C model application in the case of a PN junction

S. Guermazi, A. Toureille, C. Grill, B. El Jani

Eur. Phys. J. AP, 9 1 (2000) 43-49

Published online: 2000-01-15

DOI: https://doi.org/10.1051/epjap:2000198

This article has been cited by the following article(s):

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Wan Ying Ho, Yi Chao Chow, Shuji Nakamura, Jacques Peretti, Claude Weisbuch and James S. Speck
Applied Physics Letters 122 (21) (2023)
https://doi.org/10.1063/5.0150029

Correlation between structural and optical properties of GaN epi-layers by the cathodoluminescence technique

F. Ben Nasr, H. Guermazi and S. Guermazi
The European Physical Journal Plus 131 (6) (2016)
https://doi.org/10.1140/epjp/i2016-16195-2

The study of the charge collection of the normal‐collector configuration

Chee Chin Tan, Vincent K. S. Ong and K. Radhakrishnan
Progress in Photovoltaics: Research and Applications 21 (5) 986 (2013)
https://doi.org/10.1002/pip.2190

Cathodoluminescence study of undoped GaN films: Experiment and calculation

Férid Ben Nasr, Adel Matoussi, Roushdey Salh, et al.
Physica E: Low-dimensional Systems and Nanostructures 41 (3) 454 (2009)
https://doi.org/10.1016/j.physe.2008.09.010

Cathodoluminescence study in AlxGa1−xN structures

F. Ben Nasr, A. Matoussi, S. Guermazi and Z. Fakhfakh
Materials Science and Engineering: C 28 (5-6) 618 (2008)
https://doi.org/10.1016/j.msec.2007.10.007

Electron beam-induced current investigation of GaN Schottky diode

A. Matoussi, T. Boufaden, S. Guermazi, et al.
Journal of Electronic Materials 34 (7) 1059 (2005)
https://doi.org/10.1007/s11664-005-0096-3

Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN

A. Matoussi, T. Boufaden, S. Guermazi, B. Eljani, Y. Mlik and A. Toureille
physica status solidi (b) 240 (1) 160 (2003)
https://doi.org/10.1002/pssb.200301870

Determination of the diffusion length and the optical self absorption coefficient using EBIC model

S. Guermazi, H. Guermazi, Y. Mlik, et al.
The European Physical Journal Applied Physics 16 (1) 45 (2001)
https://doi.org/10.1051/epjap:2001192

Minority-carrier diffusion length in a GaN-based light-emitting diode

J. C. Gonzalez, K. L. Bunker and P. E. Russell
Applied Physics Letters 79 (10) 1567 (2001)
https://doi.org/10.1063/1.1400075

Ageing phenomena and determination of the optical self absorption coefficient in PN junction

S. Guermazi, Y. Mlik, B. El Jani and C. Grill
The European Physical Journal Applied Physics 16 (1) 53 (2001)
https://doi.org/10.1051/epjap:2001193