A multi-valley model for hot free-electron nonlinearities at 10.6 μm in highly doped n-GaAs
Eur. Phys. J. AP, 12 3 (2000) 169-180
Published online: 2000-12-15
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Hot-Electron Dynamics in a Semiconductor Nanowire under Intense THz Excitation
Andrei Luferau, Maximilian Obst, Stephan Winnerl, Alexej Pashkin, Susanne C. Kehr, Emmanouil Dimakis, Felix G. Kaps, Osama Hatem, Kalliopi Mavridou, Lukas M. Eng and Manfred HelmACS Photonics 11 (8) 3123 (2024)
https://doi.org/10.1021/acsphotonics.4c00433
Normal incidence infrared modulator based on single quantum well intersubband transitions
W Vandermeiren, J Stiens, G Shkerdin, C De Tandt and R VounckxJournal of Physics D: Applied Physics 47 (2) 025104 (2014)
https://doi.org/10.1088/0022-3727/47/2/025104
Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths
Gennady Shkerdin, Sulaiman Rabbaa, Johan Stiens and Roger Vounckxphysica status solidi (b) 251 (4) 882 (2014)
https://doi.org/10.1002/pssb.201350039
Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime
G Shkerdin, S Rabbaa, J Stiens and R VounckxJournal of Physics D: Applied Physics 45 (49) 495103 (2012)
https://doi.org/10.1088/0022-3727/45/49/495103
Calculated temperature rise in midinfrared laser irradiated Hg0.72Cd0.28Te
Asta Katrine Storeboe, Trond Brudevoll and Knut StenersenJournal of Applied Physics 103 (5) (2008)
https://doi.org/10.1063/1.2890751
Optimized attenuated total reflection configuration for free carrier induced optical nonlinearities in n-GaAs
G Shkerdin, J Stiens and R VounckxSemiconductor Science and Technology 19 (3) 291 (2004)
https://doi.org/10.1088/0268-1242/19/3/001
Nonlinear and bistable reflection minima at λ = 106 μm in an attenuated total reflection configuration with a highly doped n-GaAs Film
Gennady Shkerdin, Johan Stiens and Roger VounckxApplied Optics 42 (6) 1132 (2003)
https://doi.org/10.1364/AO.42.001132
The relationship between reflectivity minima and eigenmodes in multi-layer structures
G Shkerdin, J Stiens and R VounckxJournal of Optics A: Pure and Applied Optics 5 (4) 386 (2003)
https://doi.org/10.1088/1464-4258/5/4/314
Optical modulation by surface states
Elham Darabi, Sina Khorasani and Bizhan RashidianSemiconductor Science and Technology 18 (1) 60 (2003)
https://doi.org/10.1088/0268-1242/18/1/309
X-valley influence on hot free electron absorption and optical nonlinearities at 10.6 µm in highly doped n-GaAs
G. Shkerdin, J. Stiens and R. VounckxThe European Physical Journal Applied Physics 19 (1) 29 (2002)
https://doi.org/10.1051/epjap:2002046
Impact of deformation potential scattering on free-carrier induced optical nonlinearities: An experimental study in GaAs
V. Kotov, J. Stiens, G. Shkerdin, et al.Journal of Applied Physics 91 (7) 3992 (2002)
https://doi.org/10.1063/1.1448881
Influence of leaky waves on free-electron-induced nonlinear reflection properties of highly doped n-GaAs layer at medium IR-wavelengths
G Shkerdin, J Stiens and R VounckxJournal of Optics A: Pure and Applied Optics 3 (6) 493 (2001)
https://doi.org/10.1088/1464-4258/3/6/311