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Cited article:

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Selective etching of n-InP(100) triggered at surface dislocations induced by nanoscratching

R. Gassilloud, J. Michler, C. Ballif, Ph. Gasser and P. Schmuki
Electrochimica Acta 51 (11) 2182 (2006)
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Effect of coherency strain on the deformation of InxGa1−xAs superlattices under nanoindentation and bending

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Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale

K. Wasmer, C. Ballif, R. Gassilloud, C. Pouvreau, R. Rabe, J. Michler, J.‐M. Breguet, J.‐M. Solletti, A. Karimi and D. Schulz
Advanced Engineering Materials 7 (5) 309 (2005)
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Deformation mechanisms of silicon during nanoscratching

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Observations of nanoindents via cross-sectional transmission electron microscopy: a survey of deformation mechanisms

S.J Lloyd, A Castellero, F Giuliani, et al.
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Polarity-induced changes in the nanoindentation response of GaAs

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Polarity-induced changes in the nanoindentation response of GaAs

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Indentation-induced deformations of GaAs(011) at a high temperature

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Crystal polarity of sphalerite semiconductor compounds, as determined by convergent-beam electron diffraction experiments on plan-view (001) samples: Application to ZnSe crystals

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Deformations of (011) GaAs under concentrated load

E. Le Bourhis, L. Largeau, G. Patriarche and J. P. Riviere
Journal of Materials Science Letters 20 (14) 1361 (2001)
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