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Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP
Kilian Wasmer, Rémy Gassilloud, Johann Michler and Christophe Ballif Journal of Materials Research 27(1) 320 (2012) https://doi.org/10.1557/jmr.2011.305
Structure of nanoindentations in heavily n- and p-doped (001) GaAs
Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale
K. Wasmer, C. Ballif, R. Gassilloud, C. Pouvreau, R. Rabe, J. Michler, J.‐M. Breguet, J.‐M. Solletti, A. Karimi and D. Schulz Advanced Engineering Materials 7(5) 309 (2005) https://doi.org/10.1002/adem.200500044
Deformation mechanisms of silicon during nanoscratching
Observations of nanoindents via cross-sectional transmission electron microscopy: a survey of deformation mechanisms
S.J Lloyd, A Castellero, F Giuliani, et al. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 461(2060) 2521 (2005) https://doi.org/10.1098/rspa.2005.1470
Polarity-induced changes in the nanoindentation response of GaAs
Crystal polarity of sphalerite semiconductor compounds, as determined by convergent-beam electron diffraction experiments on plan-view (001) samples: Application to ZnSe crystals