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Cited article:

A new generation of power MOSFET based on the concept of “Floating Islands”

N. Cézac, F. Morancho, P. Rossel, H. Tranduc, A. Peyre-Lavigne

Eur. Phys. J. AP, 10 3 (2000) 203-209

Published online: 2000-06-15

DOI: https://doi.org/10.1051/epjap:2000133

This article has been cited by the following article(s):

Breakdown voltage and on-resistance considerations in the floating islands metal-oxide semiconductor field-effect transistor

A. Galadi, F. Morancho and M. M. Hassani
International Journal of Electronics 97 (3) 241 (2010)
https://doi.org/10.1080/00207210903017206

An accurate SPICE-compatible circuit model for power FLYMOSFETs

A. Galadi, F. Morancho, K. Benhida and M. M. Hassani
The European Physical Journal Applied Physics 39 (3) 219 (2007)
https://doi.org/10.1051/epjap:2007120

Experimental validation of the “FLoating Island” concept: realization of low on-resistance FLYMOS™ transistors

S. Alves, F. Morancho, J-M. Reynès, et al.
The European Physical Journal Applied Physics 32 (1) 7 (2005)
https://doi.org/10.1051/epjap:2005058