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Solid-phase crystallization of ultra high growth rate amorphous silicon films
K. Sharma, M. V. Ponomarev, M. A. Verheijen, O. Kunz, F. D. Tichelaar, M. C. M. van de Sanden and M. Creatore Journal of Applied Physics 111(10) (2012) https://doi.org/10.1063/1.4717951
Hydrogen release in annealed hydrogenated a‐Si/a‐Ge multilayers
C. Frigeri, M. Serényi, N. Q. Khánh, A. Csik, Z. Erdélyi, L. Nasi, D. L. Beke and H.‐G. Boyen Crystal Research and Technology 46(8) 877 (2011) https://doi.org/10.1002/crat.201000632
Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers
Effect of the hydrogen dilution on the short-range and intermediate-range-order in radiofrequency magnetron sputtered hydrogenated amorphous silicon films
A. Ben Othman, M. Daouahi, J. Henocque, K. Zellama and H. Bouchriha The European Physical Journal Applied Physics 28(1) 19 (2004) https://doi.org/10.1051/epjap:2004158
Characterisation of amorphous silicon solar cells by IBA methods
Z. Medunić, D. Gracin, I.Bogdanović Radović and M. Jakšić Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190(1-4) 611 (2002) https://doi.org/10.1016/S0168-583X(02)00461-5
Effect of light soaking and annealing on the stability of hydrogenated amorphous silicon films deposited using pure and highly helium diluted silane
Effect of the Nature of the Hydrogen Bonding on the Light-Induced Metastable Defects in Hydrogenated Amorphous Silicon Prepared by Radiofrequency Magnetron Sputtering
Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films