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Cited article:

Modeling of current-voltage characteristics of metal/ultra-thin oxide/semiconductor structures

Y. Khlifi, K. Kassmi, L. Roubi, R. Maimouni

Eur. Phys. J. AP, 9 3 (2000) 239-246

Published online: 2000-03-15

DOI: https://doi.org/10.1051/epjap:2000110

This article has been cited by the following article(s):

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

A. Aziz, K. Kassmi, R. Maimouni, et al.
The European Physical Journal Applied Physics 31 (3) 169 (2005)
https://doi.org/10.1051/epjap:2005055

Ageing of metal/ultra-thin oxide/semiconductor structures under Fowler–Nordheim current injection

K Kassmi, A Aziz and F Olivie
Nanotechnology 15 (1) 237 (2004)
https://doi.org/10.1088/0957-4484/15/1/043

Modelling of the influence of charges trapped in the oxide on theI(Vg) characteristics of metal–ultra-thin oxide–semiconductor structures

A Aziz, K Kassmi, Ka Kassmi and F Olivie
Semiconductor Science and Technology 19 (7) 877 (2004)
https://doi.org/10.1088/0268-1242/19/7/017

Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization

Y. Khlifi, K. Kassmi, A. Aziz and F. Olivie
The European Physical Journal Applied Physics 28 (1) 27 (2004)
https://doi.org/10.1051/epjap:2004157

Fowler-Nordheim Current Oscillations Analysis of Metal/Ultra-Thin Oxide/Semiconductor Structures

Y. Khlifi, K. Kassmi, L. Roubi and R. Maimouni
physica status solidi (a) 182 (2) 737 (2000)
https://doi.org/10.1002/1521-396X(200012)182:2<737::AID-PSSA737>3.0.CO;2-6