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This article has been cited by the following article(s):
Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process
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Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution
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Global Model of $\hbox{Cl}_{2}\hbox{/Ar}$ High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP
Modelling of fluorine based high density plasma for the etching of silica glasses
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Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
Development of chemically assisted etching method for GaAs-based optoelectronic devices
M. Gaillard, A. Rhallabi, L. Elmonser, A. Talneau, F. Pommereau, Ph. Pagnod-Rossiaux and N. Bouadma Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23(2) 256 (2005) https://doi.org/10.1116/1.1851540
Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during CH[sub 4]–H[sub 2] plasma etching
A. Rhallabi, L. Houlet and G. Turban Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18(4) 1366 (2000) https://doi.org/10.1116/1.582355