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Cited article:

Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process

Guillaume Le Dain, Ahmed Rhallabi, Marie Claude Fernandez, Mohamed Boufnichel and Fabrice Roqueta
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (3) (2017)
https://doi.org/10.1116/1.4982687

Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution

Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez and Christophe Cardinaud
Plasma Processes and Polymers 10 (3) 213 (2013)
https://doi.org/10.1002/ppap.201200083

Global Model of $\hbox{Cl}_{2}\hbox{/Ar}$ High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP

R. Chanson, A. Rhallabi, M. C. Fernandez, et al.
IEEE Transactions on Plasma Science 40 (4) 959 (2012)
https://doi.org/10.1109/TPS.2012.2183391

Modelling of fluorine based high density plasma for the etching of silica glasses

Ludovic Lallement, Ahmed Rhallabi, Christophe Cardinaud and Marie Claude Peignon Fernandez
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (5) (2011)
https://doi.org/10.1116/1.3624786

Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition

G. Marcos, A. Rhallabi and P. Ranson
Applied Surface Science 254 (11) 3576 (2008)
https://doi.org/10.1016/j.apsusc.2007.11.051

Development of chemically assisted etching method for GaAs-based optoelectronic devices

M. Gaillard, A. Rhallabi, L. Elmonser, A. Talneau, F. Pommereau, Ph. Pagnod-Rossiaux and N. Bouadma
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23 (2) 256 (2005)
https://doi.org/10.1116/1.1851540

Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during CH[sub 4]–H[sub 2] plasma etching

A. Rhallabi, L. Houlet and G. Turban
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (4) 1366 (2000)
https://doi.org/10.1116/1.582355