The effects of the time-dependent and exposure time to air on Au/epilayer n-Si Schottky diodes
Eur. Phys. J. AP, 6 1 (1999) 89-94
Published online: 1999-04-15
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes
P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, Min Hyuk Park and Chel-Jong ChoiApplied Physics A 127 (10) (2021)
https://doi.org/10.1007/s00339-021-04945-4
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction
P. R. Sekhar Reddy, V. Janardhanam, I. Jyothi, et al.Applied Physics A 124 (2) (2018)
https://doi.org/10.1007/s00339-017-1511-3
The stability of electrical characteristics of Ti/n-Si/Ag , Ti/n-Si/Cu and Ti/n-Si/AgCu diodes prepared under the same conditions with respect to increasing aging time
A. Taşer, B. Güzeldir and M. SağlamMaterials Science in Semiconductor Processing 68 186 (2017)
https://doi.org/10.1016/j.mssp.2017.06.014
The Effects of Thermal Annealing and Sample Temperature on Current-Voltage Characteristics of Au/n-Si/Al Schottky Diodes
Nezir YILDIRIM, Mücahide GÖNDÜK and İkram ORAKCumhuriyet Science Journal 38 (2) 275 (2017)
https://doi.org/10.17776/cumuscij.298666
Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer
Vallivedu Janardhanam, Inapagundla Jyothi, Shim-Hoon Yuk, Chel-Jong Choi, Hyung-Joong Yun, Jonghan Won, Won-Gi Hong, Sung-Nam Lee and Varra Rajagopal ReddyJournal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35 (2) (2017)
https://doi.org/10.1116/1.4978511
Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer
P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, et al.Superlattices and Microstructures 111 506 (2017)
https://doi.org/10.1016/j.spmi.2017.07.002
Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode
M. Abdolahpour Salari, E. Şenarslan, B. Güzeldir and M. SağlamJournal of Physics: Conference Series 707 012018 (2016)
https://doi.org/10.1088/1742-6596/707/1/012018
Analysis of interface states and series resistances in Au/p-InP structures prepared with photolithography technique
D. Korucu, Ş. Karataş and A. TürütIndian Journal of Physics 87 (8) 733 (2013)
https://doi.org/10.1007/s12648-013-0294-4
On the effects of air-exposure-time and time-dependency of Pb/p-Si Schottky diodes
H.A. Çetinkara and H.S. GüderPhysica B: Condensed Matter 405 (21) 4480 (2010)
https://doi.org/10.1016/j.physb.2010.08.019
Controlling of silicon–insulator–metal junction by organic semiconductor polymer thin film
Fahrettin YakuphanogluSynthetic Metals 160 (13-14) 1551 (2010)
https://doi.org/10.1016/j.synthmet.2010.05.024
Analysis of interface states of metal–insulator–semiconductor photodiode with n-type silicon by conductance technique
Fahrettin YakuphanogluSensors and Actuators A: Physical 147 (1) 104 (2008)
https://doi.org/10.1016/j.sna.2008.04.007
Analysis of interface states and series resistance of Ag/SiO2/n-Si MIS Schottky diode using current–voltage and impedance spectroscopy methods
Mustafa Okutan and Fahrettin YakuphanogluMicroelectronic Engineering 85 (3) 646 (2008)
https://doi.org/10.1016/j.mee.2007.11.011
Electronic and interface state density properties of Cu/n-Si MIS-type diode
Fahrettin YakuphanogluPhysica B: Condensed Matter 394 (1) 23 (2007)
https://doi.org/10.1016/j.physb.2007.02.002
The electrical characterization of Zn(Phen)q/p-type Si/Al diode with interfacial layer by current–voltage characteristics
Fahrettin Yakuphanoglu and Burm-Jong LeePhysica B: Condensed Matter 390 (1-2) 151 (2007)
https://doi.org/10.1016/j.physb.2006.08.006
The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure
M Sağlam, M Biber, M Çakar and A TürütApplied Surface Science 230 (1-4) 404 (2004)
https://doi.org/10.1016/j.apsusc.2004.03.003
The effects of the time-dependent on the characteristic parameters of polypyrrole/p-type Si/Al diode
M. Sağlam, D. Korucu and A. TürütPolymer 45 (21) 7335 (2004)
https://doi.org/10.1016/j.polymer.2004.08.026
The effects of treatment of Si(111) surfaces with NH4F solution on Schottky diode parameters
T. Hadjersi, H. Cheraga and W. CherguiApplied Surface Science 235 (1-2) 197 (2004)
https://doi.org/10.1016/j.apsusc.2004.05.116
Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes
M Siad, A Keffous, S Mamma, Y Belkacem and H MenariApplied Surface Science 236 (1-4) 366 (2004)
https://doi.org/10.1016/j.apsusc.2004.05.009
Effect of Hydrostatic Pressure on Characteristics Parameters of Sn/p-Si Schottky Diodes
M Çakar, C Temirci, A Türüt and G ÇankayaPhysica Scripta 68 (1) 70 (2003)
https://doi.org/10.1238/Physica.Regular.068a00070
Optical and electrochemical characterization of self-assembled octadecyltrichlorosilane monolayer on modified silicon electrode
A Abdelghani, S Hleli and K CherifMaterials Letters 56 (6) 1064 (2002)
https://doi.org/10.1016/S0167-577X(02)00678-X
Supported lipid membrane on semiconductor electrode
A Abdelghani, C Jacquin, M Huber, R Deutschmann and E SackmannMaterials Chemistry and Physics 70 (2) 187 (2001)
https://doi.org/10.1016/S0254-0584(00)00506-X
Effect of thermal annealing on Co/n-LEC GaAs (Te) Schottky contacts
Ç. Nuhoğlu, C. Temirci, B. Bati, M. Biber and A. TürütSolid State Communications 115 (6) 291 (2000)
https://doi.org/10.1016/S0038-1098(00)00193-9
On the Forward Bias Excess Capacitance at Intimate and MIS Schottky Barrier Diodes with Perfect or Imperfect Ohmic Back Contact
B Bati, Ç Nuhoğlu, M Sağlam, E Ayyildiz and A TürütPhysica Scripta 61 (2) 209 (2000)
https://doi.org/10.1238/Physica.Regular.061a00209
Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes
E. Ayyıldız, B. Batı, C. Temirci and A. TürütApplied Surface Science 152 (1-2) 57 (1999)
https://doi.org/10.1016/S0169-4332(99)00301-3