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Cited article:

Atomic structure of {112} Σ = 3 twin boundary in β–SiC

C. Ragaru, M. Lancin, C. Godon

Eur. Phys. J. AP, 5 2 (1999) 135-141

Published online: 1999-02-15

DOI: https://doi.org/10.1051/epjap:1999121

This article has been cited by the following article(s):

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Structural Analysis of Longitudinal Si–C–N Precipitates in Multicrystalline Silicon

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Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores

M. Lancin, M. Texier, G. Regula and B. Pichaud
Philosophical Magazine 89 (15) 1251 (2009)
https://doi.org/10.1080/14786430902919497

Microscopy of Semiconducting Materials 2007

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Springer Proceedings in Physics, Microscopy of Semiconducting Materials 2007 120 157 (2008)
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Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC

G. Regula *, M. Lancin, H. Idrissi, B. Pichaud and J. Douin §
Philosophical Magazine Letters 85 (5) 259 (2005)
https://doi.org/10.1080/09500830500157686

Atomic structure and core composition of partial dislocations and dislocation fronts in β-SiC by high-resolution transmission electron microscopy

M. Lancin, C. Ragaru and C. Godon
Philosophical Magazine B 81 (11) 1633 (2001)
https://doi.org/10.1080/13642810108223108