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Cited article:

Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)

S. Ravi, C. Priya, A. Mohanbabu, S. Maheswari, A. Lakshmi Narayana and P. Murugapandiyan
Journal of Materials Science (2025)
https://doi.org/10.1007/s10853-025-11237-2