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Cited article:

Theoretical investigations on the confinement properties of InAlN/AlN/GaN heterostructures with InGaN/GaN multi-quantum wells back-barrier

Xuehua Liu, Qiaoqiao Zhang, Honglu Cong, Yu Bai and Meilan Hao
Materials Science and Engineering: B 329 119467 (2026)
https://doi.org/10.1016/j.mseb.2026.119467

Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)

S. Ravi, C. Priya, A. Mohanbabu, S. Maheswari, A. Lakshmi Narayana and P. Murugapandiyan
Journal of Materials Science 60 (30) 12607 (2025)
https://doi.org/10.1007/s10853-025-11237-2