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Cited article:

The reliability impact of N doping on the HfO₂ charge-trapping layer: a first-principles study

Fengyu Ye

Eur. Phys. J. Appl. Phys., 99 (2024) 16

Published online: 2024-07-12

DOI: https://doi.org/10.1051/epjap/2024240017

This article has been cited by the following article(s):

First-principles dopant screening to suppress shallow traps in HfO2 charge-trap layers for 3D nand flash memory

Ji-yeon Lee and Yun-Heub Song
Journal of Applied Physics 140 (3) (2026)
https://doi.org/10.1063/5.0323662

Terbium oxide as high dielectric constant passivation layer for silicon-based metal-oxide-semiconductor capacitor

Songhua Zhang and Way Foong Lim
Ceramics International 51 (6) 8206 (2025)
https://doi.org/10.1016/j.ceramint.2024.12.223