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Cited article:

Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Jee-Hun Jeong, Ogyun Seok and Ho-Jun Lee
Applied Sciences 11 (24) 12075 (2021)
https://doi.org/10.3390/app112412075