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Cited article:

Inverse Stone Throwers Wales defect and enhancing I_ON/I_OFF ratio and subthreshold swing of GNR transistors

Mohammad Bagher Nasrollahnejad, Parviz Keshavarzi

Eur. Phys. J. Appl. Phys., 86 2 (2019) 20202

Published online: 2019-07-29

DOI: https://doi.org/10.1051/epjap/2019190033

This article has been cited by the following article(s):

The effect of Stone Wales defect on the electrical characteristics of phosphorene nanoribbon tunneling field effect transistors

Hadi Owlia, Mohammad Bagher Nasrollahnejad and Hossein Kamali Ardakani
Physica Scripta 100 (12) 125908 (2025)
https://doi.org/10.1088/1402-4896/ae22a0

Phosphorene nanoribbon field effect transistor with a dual material gate

Hadi Owlia, Mohammad Bagher Nasrollahnejad and Roohallah Fazli
Engineering Research Express 6 (2) 025362 (2024)
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Bandgap engineering in armchair graphene nanoribbon of zigzag-armchair-zigzag based Nano-FET: A DFT investigation

Sukhbir Singh and Inderpreet Kaur
Physica E: Low-dimensional Systems and Nanostructures 118 113960 (2020)
https://doi.org/10.1016/j.physe.2020.113960