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Cited article:

A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

Piao-Rong Xu, Ruo-He Yao

Eur. Phys. J. Appl. Phys., 72 3 (2015) 30102

Published online: 2015-12-18

DOI: https://doi.org/10.1051/epjap/2015150375

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