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Cited article:

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Florent Albany, François Lecourt, Ewa Walasiak, et al.
Microelectronics Reliability 126 114291 (2021)
https://doi.org/10.1016/j.microrel.2021.114291

High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

Jiabo Chen, Zhaoke Bian, Zhihong Liu, et al.
Semiconductor Science and Technology 34 (11) 115019 (2019)
https://doi.org/10.1088/1361-6641/ab420c