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Cited article:

Theoretical investigations on the confinement properties of InAlN/GaN/AlGaN heterostructures employing AlxGa1-xN as back-barrier

Dingding Shi, Jing Yang, Jing Zhao, Meilan Hao and Lirong Li
The European Physical Journal Applied Physics 100 7 (2025)
https://doi.org/10.1051/epjap/2025006

Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs

Megha Sharma, Bhavya Kumar and Rishu Chaujar
Micro and Nanostructures 180 207593 (2023)
https://doi.org/10.1016/j.micrna.2023.207593