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Cited article:

Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

Mahmoud Daoudi, Najla Khalifa, Ines Dhifallah, Abdelkarim Ouerghi

Eur. Phys. J. Appl. Phys., 66 1 (2014) 10102

Published online: 2014-04-21

DOI: https://doi.org/10.1051/epjap/2014130343

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https://doi.org/10.1088/1361-6641/ad22fc

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

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Scientific Reports 10 (1) (2020)
https://doi.org/10.1038/s41598-020-69153-1