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Cited article:

Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers

Ju Hyun Park, Dong Su Jeon and Tae Geun Kim
ACS Applied Materials & Interfaces 9 (49) 43336 (2017)
https://doi.org/10.1021/acsami.7b10266

Fabrication of resistive switching memory based on solution processed PMMA-HfOxblended thin films

Jae-Won Lee and Won-Ju Cho
Semiconductor Science and Technology 32 (2) 025009 (2017)
https://doi.org/10.1088/1361-6641/aa5133

Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields

Marianna Batkova and Ivan Batko
The European Physical Journal Applied Physics 73 (3) 30301 (2016)
https://doi.org/10.1051/epjap/2016150567

Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiOx thin film

Jang-Han Kim, Ki-Hyun Nam, Won-Ju Cho and Hong-Bay Chung
Japanese Journal of Applied Physics 54 (4S) 04DD06 (2015)
https://doi.org/10.7567/JJAP.54.04DD06

Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy

Kim Ngoc Pham, Minsu Choi, Cao Vinh Tran, et al.
Journal of Electronic Materials 44 (10) 3395 (2015)
https://doi.org/10.1007/s11664-015-3889-z