Articles citing this article

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Cited article:

Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications

Nisha Chugh, Manoj Kumar, Monika Bhattacharya and R. S. Gupta
Semiconductors 53 (13) 1784 (2019)
https://doi.org/10.1134/S1063782619130050

Native Oxide Transport and Removal During Atomic Layer Deposition of TiO2 Films on GaAs(100) Surfaces

Alex J. Henegar, Andrew J. Cook, Phillip Dang and Theodosia Gougousi
ACS Applied Materials & Interfaces 8 (3) 1667 (2016)
https://doi.org/10.1021/acsami.5b08998

Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

Dr. A.J. Henegar and Prof. T. Gougousi
Applied Surface Science 390 870 (2016)
https://doi.org/10.1016/j.apsusc.2016.08.144