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Cited article:

Preparation and characterization of Au/n-GaSe₄/p-Si/Al Schottky-type thin film heterojunctions

M.M. El-Nahass, I.T. Zedan, A.A. Atta

Eur. Phys. J. Appl. Phys., 59 2 (2012) 20101

Published online: 2012-08-17

DOI: https://doi.org/10.1051/epjap/2012120150

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