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Cited article:

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Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

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Journal of Electronic Materials 50 (12) 6741 (2021)
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The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure

O Polat, M Coskun, H Efeoglu, et al.
Journal of Physics: Condensed Matter 33 (3) 035704 (2021)
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A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts

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Australian Journal of Electrical and Electronics Engineering 17 (4) 278 (2020)
https://doi.org/10.1080/1448837X.2020.1857564

CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

NEZIR YILDIRIM, ABDULMECIT TURUT and HULYA DOGAN
Surface Review and Letters 25 (04) 1850082 (2018)
https://doi.org/10.1142/S0218625X18500828

THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE

KADIR EJDERHA, SEZAI ASUBAY, NEZIR YILDIRIM, et al.
Surface Review and Letters 24 (04) 1750052 (2017)
https://doi.org/10.1142/S0218625X17500524