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Cited article:

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Applied Physics A 131 (6) (2025)
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Numerical study of binding energies and optical responses of a symmetric modulation-doped GaN/In0.2Ga0.8N/GaN single quantum well: the role of electric field and donor impurity

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Effects of In, Sb and N Alloyed Capping on the Electronic Band Structures of Vertically Coupled InAs SK-SML Quantum Dot System

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Extended properties of magnetic spins of zinc ferrite nanoparticles in the THz frequency range

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Negative resistance, capacitance in Mn/SiO2/p-Si MOS structure

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Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy

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The relation of the energy of electronic state with the interior periodic potential in quantum dot given by matrix method

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