Issue
Eur. Phys. J. Appl. Phys.
Volume 91, Number 1, July 2020
Disordered Semiconductors: Physics and Applications
Article Number 10101
Number of page(s) 7
Section Semiconductors and Devices
DOI https://doi.org/10.1051/epjap/2020190297
Published online 14 July 2020
  1. E. Suzuki, H. Hiraishi, K. Ishii, Y. Hayashi, IEEE Trans. Electron Devices 30 , 122 (1983) [Google Scholar]
  2. F.R. Libsch, M.H. White, Solid-State Electron. 33 , 105 (1990) [CrossRef] [Google Scholar]
  3. S. Minami, Y. Kamigaki, IEEE Trans. Electron Devices 38 , 2519 (1991) [Google Scholar]
  4. S. Minami, Y. Kamigaki, IEEE Trans. Electron Devices 40 , 2011 (1993) [Google Scholar]
  5. M.L. French, M.H. White, Solid-State Electron. 37 , 1913 (1994) [CrossRef] [Google Scholar]
  6. J. Bu, M.H. White, Solid-State Electron. 45 , 113 (2001) [CrossRef] [Google Scholar]
  7. Y. Kamigaki, S. Minami, IEICE Trans. Electron. E84-C , 713 (2001) [Google Scholar]
  8. Y. Wang, M.H. White, Solid-State Electron. 49 , 97 (2005) [CrossRef] [Google Scholar]
  9. K. Ramkumar, I. Kouznetsov, V. Prabhakar, K. Shakeri, X. Yu, Y. Yang, L. Hinh, S. Lee, S. Samanta, H.M. Shih, S. Geha, P.C. Shih, C.C. Huang, H.C. Lee, S.H. Wu, J.H. Gau, Y.K. Sheu, in Proceedings of 5th IEEE International Memory Workshop, Monterey , 2013 , p. 199 [Google Scholar]
  10. H. Puchner, P. Ruths, V. Prabhakar, I. Kouznetsov, S. Geha, IEEE Trans. Nucl. Sci. 61 , 3005 (2014) [Google Scholar]
  11. J. Ocker, S. Slesazeck, T. Mikolajick, S. Buschbeck, S. Günther, E. Yurchuk, R. Hoffmann, V. Beyer, in Proceedings of 45th European Solid-State Device Research Conf. (ESSDERC), Graz , 2015 , p. 118 [CrossRef] [Google Scholar]
  12. H. Tanaka, M. Kido, K. Yahashi, M. Oomura, R. Katsumata, M. Kito, Y. Fukuzumi, M. Sato, Y. Nagata, in Technical Digests of 2007 Symposium on VLSI Technology, Kyoto , 2007 , (Japan Society of Applied Physics and IEEE Electron Devices Society, 2007), p. 14 [CrossRef] [Google Scholar]
  13. R. Katsumata, M. Kito, Y. Fukuzumi, M. Kido, H. Tanaka, Y. Komori, M. Ishiduki, J. Matsunami, T. Fujiwara, Y. Nagata, L. Zhang, Y. Iwata, R. Kirisawa, H. Aochi, A. Nitayama, in Digest of Technical Papers of 2009 Symposium on VLSI Technology, Kyoto , 2009 , (Japan Society of Applied Physics and IEEE Electron Devices Society, 2009), p. 136 [Google Scholar]
  14. S. Inaba, in Proceedings of 2018 IEEE International Memory Workshop , 2018 , 08388775 [Google Scholar]
  15. N. Shibata, K. Kanda, T. Shimizu, J. Nakai, O. Nagao, N. Kobayashi, M. Miakashi, Y. Nagadomi, T. Nakano, T. Kawabe, T. Shibuya, M. Sako, K. Yanagidaira, T. Hashimoto, H. Date, M. Sato, T. Nakagawa, H. Takamoto, J. Musha, T. Minamoto, M. Uda, D. Nakamura, K. Sakurai, T. Yamashita, J. Zhou, R. Tachibana, T. Takagiwa, T. Sugimoto, M. Ogawa, Y. Ochi, K. Kawaguchi, M. Kojima, T. Ogawa, T. Hashiguchi, R. Fukuda, M. Masuda, K. Kawakami, T. Someya, Y. Kajitani, Y. Matsumoto, N. Morozumi, J. Sato, N. Raghunathan, Y.L. Koh, S. Chen, J. Lee, H. Nasu, H. Sugawara, K. Hosono, T. Hisada, T. Kaneko, H. Nakamura, in 2019 IEEE International Solid-State Circuits Conference , 2019 , p. 210 [CrossRef] [Google Scholar]
  16. S. Lee, C. Kim, M. Kim, S. Joe, J. Jang, S.K. Lee, J. Kim, J. Park, H. Lee, M. Kim, S. Lee, S. Lee, J. Bang, D. Shin, H. Jang, D. Lee, N. Kim, J. Jo, J. Park, S. Park, Y. Rho, Y. Park, H. Kim, C.A. Lee, C. Yu, Y. Min, M. Kim, K. Kim, S. Moon, H. Kim, Y. Choi, Y. Ryu, J. Choi, M. Lee, J. Kim, G.S. Choo, J. Lim, D. Byeon, K. Song, K. Park, K. Kyung, in 2018 IEEE International Solid-State Circuits Conference , 2018 , p. 340 [CrossRef] [Google Scholar]
  17. K. Kobayashi, H. Yokoyama, M. Endoh, Appl. Surf. Sci. 254 , 6222 (2008) [Google Scholar]
  18. K. Kobayashi, T. Ide, Thin Solid Films 518 , 3305 (2010) [Google Scholar]
  19. K. Kobayashi, T. Ide, Jpn. J. Appl. Phys. 49 , 05FE02 (2010) [Google Scholar]
  20. K. Kobayashi, S. Naito, S. Tanaka, Y. Ito, ECS Transactions 64 , 85 (2014) [Google Scholar]
  21. S.R.A. Ahmed, K. Kobayashi, Ieice Trans. Electron. E100–C , 662 (2017) [CrossRef] [Google Scholar]
  22. H. Schauer, E. Arnord, J. Appl. Phys. 50 , 6956 (1979) [Google Scholar]
  23. A. Arreghini, F. Driussi, E. Vianello, D. Esseni, M.J. van Duuren, D.S. Golubovíc, N. Akil, R. van Schaijk, IEEE Trans. Electron Devices 55 , 1211 (2008) [Google Scholar]
  24. S. Fujii, N. Yasuda, J. Fujiki, K. Muraoka, Jpn. J. Appl. Phys. 49 , 04DD06 (2010) [Google Scholar]
  25. N. Yasuda, S. Fujii, J. Fujiki, H. Kusai, ECS Transactions 35 , 417 (2011) [Google Scholar]
  26. S.R.A. Ahmed, K. Kato, K. Kobayashi, Materials Science in Semiconductor Processing 70 , 265 (2017) [Google Scholar]
  27. H. Mino, K. Kobayashi, ECS Transactions 86 , 23 (2018) [Google Scholar]
  28. H.B. Michaelson, J. Appl. Phys. 48 , 4729 (1977) [Google Scholar]
  29. S. Zafar, C. Cabra Jr., R. Amos, A. Callegari, Appl. Phys. Lett. 80 , 4858 (2002) [Google Scholar]
  30. M. Lenzlinger, E.H. Snow, J. Appl. Phys. 40 , 278 (1969) [Google Scholar]
  31. E.H. Poindexter, W.L. Warren, J. Electrochem. Soc. 142 , 2508 (1995) [Google Scholar]
  32. S. Hasegawa, M. Ikeda, T. Inokuma, Y. Kurata, J. Appl. Phys. 70 , 2896 (1996) [Google Scholar]
  33. W.L. Warren, C.H. Seager, J. Robertson, J. Kanicki, E.H. Poindexter, J. Electrochem. Soc. 143 , 3685 (1996) [Google Scholar]
  34. E. Vianello, F. Driussi, P. Blaise, P. Palestri, D. Esseni, L. Perniola, G. Molas, B. De Salvo, L. Selmi, IEEE Trans. Electron Devices 58 , 2490 (2011) [Google Scholar]
  35. K. Kobayashi, A. Suzuki, K. Ishikawa, Thin Solid Films 550 , 545 (2014) [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.