| Issue |
Eur. Phys. J. AP
Volume 11, Number 1, July 2000
|
|
|---|---|---|
| Page(s) | 3 - 8 | |
| DOI | https://doi.org/10.1051/epjap:2000139 | |
| Published online | 15 July 2000 | |
https://doi.org/10.1051/epjap:2000139
The growth of boron doped (100) textured diamond films by three-step process
Department of Physics, and Department of Electrical Engineering, National
Tsing Hua University, Hsinchu, Taiwan
Corresponding author: jtlue@phys.nthu.edu.tw
Received:
22
September
1998
Revised:
21
April
1999
Accepted:
6
March
2000
Published online: 15 July 2000
p-type (100) faceted diamond films can be successfully grown by bubbling H2 through liquid B(OCH3)3 during the Microwave Plasma Enhanced Chemical Vapour Deposition (MPCVD). Ramann spectra and scanning electron micrographs (SEM) convincingly illustrate that diamond-film growth on silicon substrates by a three-step process yields good uniformity with preferential orientation. The field emission current density of the boron doped diamond films can be enhanced from 0.7 μA/cm2 for the as grown films to 140 μA/cm2 at an applied field of 20 V/μm by hydrogenation treatment.
PACS: 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) / 81.40.Tv – Optical and dielectric properties (related to treatment conditions) / 68.55.Jk – Structure and morphology; thickness
© EDP Sciences, 2000
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