Regular Article

Fabrication and characterization of graphene induced Metal Semiconductor Metal (MSM) structure for detection and sensing applications

¹ Centre for Advanced Electronics & Photovoltaic Engineering (CAEPE), International Islamic University, Islamabad 44000, Pakistan
² Department of Electrical Engineering, International Islamic University, Islamabad 44000, Pakistan
³ Department of Physics and Astronomy, Dickinson College, Carlisle, Pennsylvania 17013, USA

^* e-mail: shoaib.alam@iiu.edu.pk; ahmed.shuja@iiu.edu.pk

Received: 17 February 2020
Received in final form: 3 November 2020
Accepted: 30 November 2020
Published online: 13 January 2021

Abstract

The demand for miniaturization of electronic devices has lent to the development of graphene-based hybrid structures, which include the Metal-Semiconductor-Metal (MSM) device. In this work, one has developed such a device by growing monolayers of graphene on top of Nickel to form the basic structural matrix. Four different variants of the MSM unit structures have been developed to assess their potential in next generation electronics. The presence of graphene in the original matrix was confirmed via Atomic Force Microscopy, and the optical response of the graphene layer was further studied using Spectroscopic Ellipsometry in UV-Vis-NIR regime; Forouhi-Bloomer model was used to analyze the ellipsometry data. Hall effect and other electrical characterization measurements were conducted to analyze the electrical properties of the fabricated devices.