| Issue |
Eur. Phys. J. Appl. Phys.
Volume 83, Number 3, September 2018
|
|
|---|---|---|
| Article Number | 30101 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2018180013 | |
| Published online | 26 October 2018 | |
https://doi.org/10.1051/epjap/2018180013
Regular Article
The conduction band non-parabolicity of degenerate AZO semiconductors: k.p method
1
Department of Physics, Urmia University,
11 km Serow Road, Urmia, Iran
2
Urmia University Campus,
Shahid
Beheshti Ave., Urmia, Iran
* e-mail: a.esmaeili@urmia.ac.ir
Received:
11
January
2018
Received in final form:
2
September
2018
Accepted:
5
September
2018
Published online: 26 October 2018
We present a discussion regarding the conduction band non-parabolicity and the Fermi energy of Al doped ZnO (AZO) degenerate semiconductors using the higher orders of Fermi–Dirac (F-D) integrals. We find an analytical expression for Fermi energy, based on two-band k.p theory and modified Boltzmann's classical equation. We examine the accuracy of resulted expression using absolute error value.
© EDP Sciences, 2018
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