|
Issue
|
|
Eur. Phys. J. Appl. Phys.
Volume 49, Number 2, February 2010
Focus on Electrical Contacts
|
|
|
|
Article Number
|
|
20101 |
|
Number of page(s)
|
|
24 |
| Section |
|
Review Article |
| DOI |
|
10.1051/epjap/2009211 |
| Published online |
|
26 January 2010
|
|
-
Y. Tian, W. Li, J. Chen et al., Rev. Sci. Instrum. 79, 103708 (2009)
[CrossRef]
-
P. Bleuet, P. Cloetens, P. Gergaud et al., Rev. Sci. Instrum. 80, 56101 (2009)
[CrossRef]
-
M. Hanke, M. Dubslaff, M. Schmidbauer et al., Appl. Phys. Lett. 92, 193109 (2008)
[CrossRef]
-
S.M. Polvino, C.E. Murray, O. Kalenci et al., Appl. Phys. Lett. 92, 224105 (2008)
[CrossRef]
-
International Technology Roadmap for Semiconductors, http://public.itrs.net
-
A.C. Diebold (ed.), Handbook of silicon semiconductor metrology (Marcel Dekker, New-York, 2001)
-
A. Gril, V. Patel, K.P. Rodbell et al., J. Appl. Phys. 94, 3427 (2003)
[CrossRef]
-
A.V. Zozulya, O.M. Yefanov, I.A. Vartanyants et al., Phys. Rev. B 78, 121304 (2008)
[CrossRef]
-
T. Suzuki, K. Omote, Y. Ito et al., Thin Solid Films 515, 2410 (2006)
[CrossRef]
-
A. Danel, N. Cabuil, T. Lardin et al., Spectrochim. Acta B 63, 1375 (2008)
[CrossRef]
-
L.G. Parrat, Phys. Rev. 95, 359 (1954)
[CrossRef]
-
C.E. Murray, M. Sankarapandian, S.M. Polvino et al., Appl. Phys. Lett. 90, 171919 (2007)
[CrossRef]
-
http://www.jordanvalley.com
-
C.R. Brundle, A.D. Baker, T.D. Thomas, Phys. Today 32, 62 (1979)
[CrossRef]
-
http://www.revera.com
-
G.M. Cohen, P.M. Mooney, H. Park et al., J. Appl. Phys. 93, 245 (2003)
[CrossRef]
-
I.V. Antonova, V.P. Popov, J. Bak-Misiuk et al., J. Electrochem. Soc. 149, G490 (2002)
[CrossRef]
-
M.S. Goorsky, P. Feichtinger, H. Fukuto et al., Phil. Trans. R. Soc. Lond. A 357, 2777 (1999)
[CrossRef]
-
C. Emons, HYMNE MEDEA+, Project Report (2005)
-
S. Pokrant, R. Pantel, M. Cheynet, Microelectron. Eng. 83, 2364 (2006)
[CrossRef]
-
T. Yamaguchi, K. Kashihara, T. Okudaira et al., IEEE Trans. Electron. Dev. 56, 206 (2009)
[CrossRef]
-
L. Capello, T.H. Metzger, V. Holy et al., J. Appl. Cryst. 39, 571 (2006)
[CrossRef]
-
D. Babonneau, S. Peripolli, M.-F. Beaufort et al., J. Appl. Cryst. 40, s350 (2007)
-
L. Capello, F. Rieutord, A. Tauzin et al., J. Appl. Phys. 102, 26106 (2007)
[CrossRef]
-
A. Uedono, K. Ikeuchi, T. Otsuka et al., J. Appl. Phys. 99, 54507 (2006)
[CrossRef]
-
M.A. Douglas, S. Hattangady, K. Eason, J. Electrochem. Soc. 147, 1893 (2000)
[CrossRef]
-
F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, Phys. Rev. B 38, 6084 (1988)
[CrossRef]
-
M.P. Seah, S.J. Spencer, Surf. Int. Anal. 35, 515 (2003)
[CrossRef]
-
S. Tougaard, J. Vac. Sci. Technol. A 21, 1081 (2003)
[CrossRef]
-
T. Hattori, H. Nohira, S. Shinagawa et al., Microelectron. Reliab. 47, 20 (2007)
[CrossRef]
-
M. Bidaud, J.-P. Carrère, F. Bœuf et al., Proc. Analytical Techniques for Semiconductor Materials and Process Characterization IV (ALTECH 2003), Paris, France, 2003
-
J. Bienacel, D. Barge, M. Bidaud et al., Mater. Sci. Semicond. Process. 7, 181 (2004)
[CrossRef]
-
S. Bonnetier, B. Imbert, M. Hopstaken et al., Microelectron. Eng. 84, 2528 (2007)
[CrossRef]
-
K. Hoummada, C. Perrin-Pellegrino, D. Mangelinck, J. Appl. Phys. 106, 63511 (2009)
[CrossRef]
-
C. Detavernier, C. Lavoie, Appl. Phys. Lett. 84, 3549 (2004)
[CrossRef]
-
J.-P. Gonchond, C. Wyon, F. Cacho et al., Proc. Characterization and Metrology for ULSI Technology (2005), p. 182
-
C. Lavoie, F. D'Heurle, C. Detavernier et al., Microelectron. Eng. 70, 144 (2003)
[CrossRef]
-
D. Deduytsche, C. Detavernier, L. Van Meirhaeghe et al., J. Appl. Phys. 98, 33526 (2005)
[CrossRef]
-
S. Zollner, R.B. Gregory, M.L. Kottke et al., Proc. Frontiers of Characterization and Metrology for Nanoelectronics (2007), p. 337
-
K. Maex, M.R. Baklanov, D. Shamiryan et al., J. Appl. Phys. 93, 8793 (2006)
[CrossRef]
-
C.-H. Hsua, U-Ser Jenga, Hsin-Yi Leea et al., Thin Solid Films 472, 323 (2005)
[CrossRef]
-
T.K. Goh, T.K.S. Wong, Microelectron. Eng. 75, 330 (2004)
[CrossRef]
-
L. Plantier, J.-P. Gonchond, F. Pemot et al., Proc. Frontiers of Characterization and Metrology for Nanoelectronics (2007), p. 347
-
H.-J. Lee, E.K. Lin, H. Wang et al., Chem. Mater. 14, 1845 (2002)
[CrossRef]
-
H.-J. Lee, C.L. Soles, D. Liu et al., J. Appl. Phys. 95, 2355 (2004)
[CrossRef]
-
H.-J. Lee, C.L. Soles, D.-W. Liu et al., J. Appl. Phys. 100, 064104 (2006)
[CrossRef]
-
M. Damon, T. Chevolleau, T. David et al., J. Vac. Sci. Technol. B 26, 1964 (2008)
[CrossRef]
-
E. Huang, M.F. Toney, W. Volksen et al., Appl. Phys. Lett. 81, 2232 (2002)
[CrossRef]
-
D.J. Kinning, E.J. Thomas, Macromolecules 17, 1712 (1984)
[CrossRef]
-
C. Wyon, D. Delille, J.-P. Gonchond et al., Thin Solid Films 450, 84 (2004)
[CrossRef]
-
C. Wyon, J.-P. Gonchond, D. Delille et al., Appl. Surf. Sci. 253, 21 (2006)
[CrossRef]
-
T. Hara, K. Sakata, A. Kawaguchi et al., Electrochem. Solid-State Lett. 4, 11, C81 (2001)
-
T. Aoyama, S. Sadai, Y. Okayama et al., J. Electrochem. Soc. 143, 977 (1996)
[CrossRef]
-
G. Dollinger, A. Bergmaier, L. Goergens et al., Nucl. Instrum. Meth. Phys. Res. B 219, 200 (2004)
[CrossRef]
-
E. Deloffre, C. Wyon, M. Gros-Jean, in 207th ECS Meeting, Quebec City, Canada, 2005, Rep. Tech. Prog. 501, Abstract 434, http://www.electrochem.org/meetings/biannual/207/abstracts/tp/reportTechProg_501_H1.html
-
G.-Y. Choi, S.K. Kim, S.Y. Lee et al., J. Electrochem. Soc. 156, G71 (2009)
[CrossRef]
-
S. Jeannot, A. Bajolet, J.-P. Manceau et al., Proc. Int. Electron Devices Meeting-IEDM (2007), p. 997
-
C. Wang, K.-W. Choi, W.-E. Fu et al., Proc. IEEE/SEMI Advanced Semiconductor Manufacturing Conf. (2008), p. 142
-
E. Zschech, W. Yun, G. Schneider, Appl. Phys. A 92, 423 (2008)
[CrossRef]
-
C.J. Wilson, C. Zhao, L. Zhao et al., Proc. Int. Interconnect Technol. Conf. (2009), p.72
-
Y. Narita, F. Hirose, M. Nagato et al., Thin Solid Films 517, 209 (2008)
[CrossRef]
-
A. Bailly, O. Renault, N. Barrett et al., J. Phys.: Condens. Matter 21, 314002 (2009)
[CrossRef]
|