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Issue Eur. Phys. J. Appl. Phys.
Volume 48, Number 2, November 2009
Article Number 20303
Number of page(s) 4
Section Semiconductors and Devices
DOI 10.1051/epjap/2009161
Published online 02 October 2009

Eur. Phys. J. Appl. Phys. 48, 20303 (2009)
DOI: 10.1051/epjap/2009161

InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer

J.-H. Tsai1, Y.-H. Lee1, N.-F. Dale1 and W.-S. Lour2

1  Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan
2  Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan

jhtsai@nknucc.nknu.edu.tw

Received: 10 January 2009 / Received in final form: 22 June 2009 / Accepted: 28 July 2009 / Published online: 2 October 2009

Abstract
In this paper, we first fabricate and demonstrate the InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic heavy-doped channel. Due to the large gate potential barrier for the use of the n+-GaAs/p+-InGaP/n-GaAs camel-like gate and the thin as well as heavy doping n+-InGaAs channel layer, the effective conduction band discontinuity $(\Delta E_c)$ is substantially extended and a high gate turn-on voltage up to 2.0 V is obtained. The device exhibits a relatively broad gate voltage swing resulting from the high gate turn-on voltage. In addition, a maximum drain current of 393 mA/mm and a maximum transconductance of 96 mS/mm are measured. These results indicate that the studied device is suitable for signal amplifier and linear circuit applications.

PACS
73.40.Kp - III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.
73.61.Ey - III-V semiconductors.
73.63.Hs - Quantum wells.

© EDP Sciences 2009


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