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Issue Eur. Phys. J. Appl. Phys.
Volume 47, Number 3, September 2009
Article Number 30302
Number of page(s) 6
Section Semiconductors and Devices
DOI 10.1051/epjap/2009107
Published online 12 June 2009

Eur. Phys. J. Appl. Phys. 47, 30302 (2009)
DOI: 10.1051/epjap/2009107

Photoluminescence study of nitrogen effects on confined states in GaAs1-xNxGaAs quantum wells

I. Dhifallah1, S. Aloulou1, A. Bardaoui1, J.C. Harmand2 and R. Chtourou1

1  Laboratoire de Photovoltaïque, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
2  Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France

ines.dhifallah@gmail.com

Received: 10 February 2009 / Accepted: 7 April 2009 / Published online: 12 June 2009

Abstract
Modulation doped heterostructures GaAs/GaAs1-xNx/GaAs/Al0.3Ga0.7As:$\delta$Si with GaAs1-xNx Quantum Wells (QW) with different nitrogen contents x have been grown by molecular beam epitaxy and investigated by photoluminescence (PL) spectroscopy. We have found that at low temperature the photoluminescence spectra are essentially formed by two structures observed at 1.51 eV and 1.47 eV attributed to excitonic transitions in GaAs layer, and in GaAs1-xNx QW, respectively. The Band Anticrossing Model (BAC) has been adopted in order to confirm the nature of the transitions in GaAs1-xNx QW's. The band structure of $\delta$-doped GaAs/GaAs1-xNx/GaAs/Al0.3Ga0.7As:$\delta$Si has been studied theoretically by using the finite differences method to self-consistently and simultaneously solve Schrödinger and Poisson equations written within the Hartree approximation. We find in this way good agreement between our measured and our calculated values for the transition energies in our GaAs1-xNx QW's.

PACS
61.82.FK - Semiconductors.
73.21.FG - Quantum wells.
47.11.BC - Finite difference methods.

© EDP Sciences 2009


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