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Issue Eur. Phys. J. Appl. Phys.
Volume 37, Number 2, February 2007
Page(s) 213 - 218
Section Characterization of Materials: Imaging,\ Microscopy and Spectroscopy
DOI 10.1051/epjap:2007018
Published online 24 January 2007

Eur. Phys. J. Appl. Phys. 37, 213-218 (2007)
DOI: 10.1051/epjap:2007018

Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation

S. Dannefaer1, V. Avalos1 and O. Andersen2

1  Department of Physics, University of Winnipeg, 515 Portage Avenue, Winnipeg, Manitoba, Canada R3B 2E9
2  Topsil Semiconductor Materials, Linderupvej 4, PO Box 100, 3600 Frederikssund, Denmark

sdannefaer@shaw.ca

(Received: 7 February 2006 / Received in final form: 16 September 2006 / Accepted: 20 November 2006 / Published online: 24 January 2007 )

Abstract
Positron annihilation was used to characterize vacancy-type defects in two types of polycrystalline Si grown at temperatures above ~800 $^{\circ}$C by chemical vapour deposition. The majority of vacancies (80%) consisted of monovacancies, and their thermal stability indicated them to be trapped at grain boundaries or at dislocations. Annealing above 500 $^{\circ}$C caused a significant reduction in the monovacancy concentration, and an increase in divacancy concentration. Divacancies started to anneal above 1200 $^{\circ}$C. Measurements between 8 and 293 K indicated that vacancies were neutral before as well as after annealing at 1380 $^{\circ}$C. Fz-grown Si from one of these materials contained vacancy clusters with an average size of six to ten vacancies which persisted to 1380 $^{\circ}$C. The cluster concentration corresponded to a monovacancy concentration of 1015 to 1016 cm-3, which is at least one order of magnitude larger than estimates based on voids [R. Falster, V.V. Voronko, F. Quast, Phys. Status Solidi B 222, 219 (2000)].

PACS
61.82. Fk - Semiconductors.
61.72.Ji - Point defects (vacancies, interstitials, color centers, etc.) and defect clusters.
78.70.Bj - Positron annihilation (for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics).

© EDP Sciences 2007


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